Engineering topics

Su, C.-H.

Publications and source records attributed to Su, C.-H..

26 records · Page 2

NASA NTRS1999

Pressure Effect in ZnO Films Using Off-Axis Sputtering Deposition

ZnO films are deposited on (0001) sapphire, (001) Si and quartz substrates using the off-axis reactive magnetron sputtering deposition. Based on film thickness measurements, three transport regions of sputtered particles are observed when films are deposited in the pressure regions of 5 mtorr - 150 mtorr. X-ray diffraction, scanning probes microscopy, and electrical measurements are also used to characterize these films. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. The epitaxial films deposited at high pressure reveal a flat surface with some hexagonal facets. The density of hexagonal facets decreases when the growth pressure is reduced. The resistivity of these epitaxial films also depends on the growth pressures. A relationship between the pressure effects and film properties are discussed.

Zhu, Shen↗

NASA NTRS1999

Polarity Effects of Substrate Surface in Epitaxial ZnO Film Growth

Epitaxial ZnO films were grown on the two polar surfaces (0-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films are also deposited on the (000 I) Al203 substrates. It is found that the two polar surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which are strongly inference the epitaxial film growth. The morphology and structure of epitaxial films on the ZnO substrates are different from the film on the Al203 substrates. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite Surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth using reactive sputtering deposition.

Zhu, Shen↗

NASA NTRS1999

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.

Zhu, Shen↗

NASA NTRS1998

Directional Solidification and Characterization of Hg(0.89) Mn(0.11)Te

Two boules of Hg(0.89)Mn(0.11)Te(MMT) were solidified using the vertical Bridgman-Stockbarger method. Translation rates of 0.09 and 0. 18 microns/s were used. The influence of growth rate on axial compositional homogeneity in the MMT boules was evaluated experimentally by conducting precision density measurements on radial slices taken from each boule. In addition, Plane Front Solidification theory and segregation coefficient (k) data for the Hg(1-x)Mn(x)Te system were used to fit theoretical composition profiles to the measured MMT axial composition profiles. The strong correlation between the measured and calculated MMT axial composition profiles indicates diffusion dominated axial solute redistribution in the boules under the applied growth conditions. The analysis of the MMT axial composition profiles by Plane Front Solidification theory allowed the calculation of the effective diffusion coefficient (D(eff) = 3.5 x l0(exp -5) sq cm/s). The k-values for the Hg(1-x)Mn(x)Te system and the D(sub eff) - value were then used to verify that both boules were solidified under conditions which did not exceed the Constitutional Supercooling Criteria under ideal conditions. Finally, a preliminary examination of the radial compositional variation in each MMT was made using Fourier Transform Infra-Red Spectroscopy (FTIR). The radial homogeneity in the MMT boules was found to be comparable for both translation rates.

Price, M. W.↗

NASA NTRS1996

The Universal Multizone Crystallizator (UMC) Furnace: An International Cooperative Agreement

The Universal Multizone Crystallizator (UMC) is a special apparatus for crystal growth under terrestrial and microgravity conditions. The use of twenty-five zones allows the UMC to be used for several normal freezing growth techniques. The thermal profile is electronically translated along the stationary sample by systematically reducing the power to the control zones. Elimination of mechanical translation devices increases the systems reliability while simultaneously reducing the size and weight. This paper addresses the UMC furnace design, sample cartridge and typical thermal profiles and corresponding power requirements necessary for the dynamic gradient freeze crystal growth technique. Results from physical vapor transport and traveling heater method crystal growth experiments are also discussed.

Watring, D. A.↗

NASA NTRS1994

Crystal growth of selected II-VI semiconducting alloys by directional solidification

A Hg(0.84)Zn(0.16)Te alloy crystal was back-melted and partially resolidified during the first United States Microgravity Laboratory (USML-1) mission in the Marshall Space Flight Center's Crystal Growth Furnace. The experiment was inadvertently terminated at about 30% of planned completion. Nonetheless, it was successfully demonstrated that HgZnTe alloy ingots partially grown and quenched on the ground can be back-melted and regrown in space under nearly steady state growth conditions. An identical 'ground-truth' experiment was performed following the mission. Preliminary results are presented for both crystals, as well as for a series of other crystals grown prior to the mission for the purposes of optimizing in-flight growth conditions.

Lehoczky, Sandor L.↗

NASA NTRS1992

Vibronic spectra of Cu(2+) in ZnTe

Infrared-absorption spectra of substitutional Cu(2+) ions in ZnTe have been measured at 4.6 K. Several distinct absorption peaks are observed between 800 and 2000/cm. Absorption peaks at 1002 and 1069/cm are identified as zero-phonon lines arising from 2T2-2E transitions. Between 1069 and 2000/cm, several sets of sharp absorption lines are seen to recur regularly at an interval of 210/cm, corresponding to the LO phonon energy. Within each set distinct vibronic sidebands that cannot be identified with critical-point energies of TA, LA, TO or LO phonon modes are observed. A dynamic Jahn-Teller effect, involving coupling between a single-phonon mode and the electronic states of the 2E level, is proposed to account for the observed spectra.

Volz, M. P.↗

NASA NTRS1990

Microhardness variations in II-VI semiconducting compounds as a function of composition

A comparison is made of microhardness variations as a function of composition in directionally solidified alloys of Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Hg(1-x)Cd(x)Se, and Hg(1-x)Zn(x)Se, using the same growth method for all four systems in order to eliminate preparation-induced mechanical property variations. In each case, compositional analysis was performed next to a microhardness indentation. Due to the 14-percent shorter bond length of ZnTe relative to HgTe, Zn-base alloy mechanical strength should exceed that of Cd-base systems. Experimental verification is furnished for this hardening effect in both Hg(1-x)Zn(x)Te and Hg(1-x)Zn(x)Se.

Andrews, R. N.↗