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Sulas-Kern, Dana B.

Publications and source records attributed to Sulas-Kern, Dana B..

At least 19 records

Quantifying carrier density in monolayer MoS 2 by optical spectroscopy

The successful design and device integration of nanoscale heterointerfaces hinges upon precise manipulation of both ground- and excited-state charge carrier (electron and hole) densities. However, it is particularly challenging to quantify these charge carrier densities in nanoscale materials, leading to uncertainties in the mechanisms of many carrier density-dependent properties and processes. Here, we demonstrate a method that utilizes steady-state and transient absorption spectroscopies to correlate monolayer MoS 2 electron density with the easily measured metric of excitonic optical absorption quenching in a variety of mixed-dimensionality s-SWCNT/MoS 2 heterostructures. By employing a 2D phase-space filling model, the resulting correlation elucidates the relationship between charge density, local dielectric environment, and concomitant excitonic properties. The phase-space filling model is also able to describe existing trends from the literature on transistor-based measurements on MoS 2 , WS 2 , and MoSe 2 monolayers that were not previously compared to a physical model, providing additional support for our method and results. The findings provide a pathway to the community for estimating both ground- and excited-state carrier densities in a wide range of TMDC-based systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Characterization of ultrafast-laser ablation of micro-structures in Li-ion battery anode and cathode materials: Morphology, rate, and efficiency

Characterization of the rate and quality of ultrafast-laser ablation of Li-ion battery (LIB) electrode materials is presented for a collection of common and next-generation electrodes. Laser ablated micro-structures on the surface of LIB electrodes have been shown to provide dramatic enhancement of high-rate capability and electrode wetting. However, industrial adoption is hampered by a lack of data enabling informed choice of laser parameters and predicting process throughput. Here this work bridges this gap by providing characterization of the ablation process at more laser parameters (laser fluence and number of pulses used) than are currently available in the literature. Further, we expand on previous graphite and lithium iron phosphate (LFP) ablation work by extending ablation characterization to new LIB materials, providing high data resolution and adopting new characterization metrics which are relevant for industrial application of this technology. Ablated pores are characterized by their ablated depth, volume, and how the depth and volume ablation rate changes as a function of pore depth. Finally, we provide a detailed characterization of the morphology of laser ablated micro-structures which informs how material and laser parameters affect the quality of laser-processed electrodes.

25 ENERGY STORAGE↗

Investigating Electric Field and Light Induced Degradation in Perovskite Solar Cells through Nanometer-Scale Potential Imaging

Electric field and light induced degradations in perovskite solar cells were evaluated through nanometer-scale potential imaging across the device by using in-situ Kelvin probe force microscopy (KPFM). We derived the electric field profile from potential profiles at different bias voltages to evaluate the locations and quality of junctions across the device. We found relative changes in electric field peak intensity at the HTL/perovskite and perovskite/ETL interfaces upon stressing devices separately under voltage or light. KPFM results during 12-hour stress/rest cycling under electrical bias show both reversible and irreversible changes in the device's interfacial fields. We also observed change in the electric field profile between control and degraded devices after 100 hours of stress/rest cycling under light. Our results demonstrate how nanometer-scale potential imaging can be used to understand the impacts of external electric fields and light soaking on both irreversible degradation and reversible metastability in perovskite solar cells.

Kelvin probe force microscopy↗

Acceleration Factors for Combined‐Accelerated Stress Testing of Photovoltaic Modules

Combined‐accelerated stress testing (C‐AST) is developed to establish the durability of photovoltaic (PV) products, including for degradation modes that are not a priori known or examined in standardized tests. C‐AST aims to comprehensively represent the sample, stress factors, and their combinations using levels at the statistical tails of the natural environment. Acceleration factors for relevant climate sequences within the C‐AST cycle with respect to the Florida USA climate are estimated for selected degradation mechanisms. It is found that for degradation of the outer backsheet polymer layer, the acceleration factor of the tropical climate sequence (the longest of the climate sequences) is f ( T , G ) = 17.3 with ultraviolet photodegradation; for polyethylene terephthalate hydrolysis (backsheets), f ( T , RH ) = 426; for electrochemical corrosion (PV cell), f ( I ) = 14.1; and for PbSn solder fatigue f (Δ T , r ( T )) = 17.3. Here, T is the module temperature, G is the broadband spectrum irradiance on the plane of array of the module, RH is the relative humidity on the module surface, I is the leakage current through the module packaging, and r ( T ), the number of temperature reversals. The methods discussed herein are generally applicable for evaluating acceleration factors in other accelerated test methods.

14 SOLAR ENERGY↗

Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.

degradation↗

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si front metallization. Scanning spreading resistance microscopy imaging revealed that the number of point or small area electrical contacts decreased in a degraded cell compared to an unaffected cell, demonstrating the direct root cause of the Rs degradation. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the degradation during the long-term field service. The reduction in electrical contact is likely caused by a structural change: The Ag particles in contact with the Si cell aggregate into bulk Ag, and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 um blocks the current conduction from cell emitter to the Ag grid. Our results demonstrate an example of the multi-scale characterization approach for understanding degradation mechanisms in photovoltaics.

c-Si solar cell↗

Photovoltaic Module Imaging for Hail Damage Assessment with Multi-Year Follow Up

Outdoor-aged photovoltaic modules that have experienced golf-ball sized hail are characterized by flash testing and photoluminescence, electroluminescence, thermal, and ultraviolet fluorescence imaging. These measurements were performed immediately after the hailstorm and then again after another two years and four years in the field. The modules originally experienced different ranges of hail damage with some having cracks on approximately half of the cells and some having few to no cracked cells. Flash testing shows that the hail-damaged modules with the most cracked cells have 3 to 4% less power than those with the least damage. After four more years in the outdoor climate of Golden, Colorado since the hailstorm, all of the modules still exhibit similar relative power and amounts of cell cracking, suggesting that the hail damage has only initially reduced power but has not yet increased the degradation rate.

electroluminescence↗

Nanometer-Scale Measurement of Grid Finger Electrical Conduction Pathways to Detect Series Resistance Degradation of Utility-Scale Silicon Solar Cells

Here, we report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility-scale photovoltaic power plant by imaging the local resistance at the Ag/Si interface of the c-Si front metallization. Scanning spreading resistance microscopy imaging with nanometer (nm) scale spatial resolution revealed that the number of point or small-area electrical contacts decreased substantially in a degraded cell compared to an unaffected cell, demonstrating the root cause of Rs degradation. The decrease in electrical contacts is likely caused by a structural change - the Ag particles in contact with the Si cell (or via a nm-thickness tunneling glass layer) aggregate into bulk Ag, and a highly resistive glass frit forms a belt shape at the Ag/Si interface. This resistive belt, with a thickness of ~1 um, blocks the current conduction from the cell emitter to the Ag grid. Our microscopy results help to unravel unambiguously the degradation mechanism and demonstrate an example of the multiscale characterization approach for understanding degradation in field-weathered PV module.

14 SOLAR ENERGY↗

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si cell front metallization. Our previous work showed that the I-V measurement of individual cells demonstrated exclusively the cell Rs degradation, and the "beads pattern" of electroluminescence indicated the degradation at the Ag grid of front metallization. Scanning spreading resistance microscopy (SSRM) imaging, which is based on the contact mode of atomic force microscopy and taken on the cross-sections of Ag/Si contact, revealed the electrical conduction pathway of Ag particles in point or small area contact with Si cell emitter. The SSRM results illustrated that the number of electrical contacts in the degraded cell decreased largely compared with the unaffected cell, demonstrating the direct cause of the Rs degradation. This reduction in electrical contact in the degraded cell could be caused by a structural change in the Ag grid during long-term field service: The Ag particles in contact with Si aggregate into the Ag bulk and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 m blocks the current conduction from cell emitter to the Ag grid. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the different degradation susceptibility during the long-term field service. Our results demonstrate an example of the multi-scale characterization approach for understanding photovoltaic degradation mechanisms.

ENGINEERING,SOLAR ENERGY↗

Laser ablation for structuring Li-ion electrodes for fast charging and its impact on material properties, rate capability, Li plating, and wetting

Laser ablation is a scalable technique for decreasing the effective tortuosity of electrodes by selectively removing material with high precision. Applied to ≈ 110 um thick electrode coatings, this work focuses on understanding the impact of laser ablation on electrode material properties at the beginning of life and synergistic impacts of ablated channels on cell performance throughout their cycle life. Post laser ablation, local changes in chemistry, crystallography, and morphology of the laser-impacted electrode regions are investigated. It is shown that femtosecond pulsed laser ablation can achieve high-rate material removal with minor material damage locally at the interface of the impacted zones. The capacity achieved during a 6C (10 min) constant-current constant-voltage charge to 4.2 V improved from 1 mAh cm -2 for the non-ablated electrodes to almost 2 mAh cm -2 for the ablated electrodes. This benefit is attributed to a synergistic effect of enhanced wetting and decreased electrode tortuosity. The benefit was maintained for over 120 cycles, and upon disassembly decreased Li-plating on the graphite anode was observed. Finally, multi-physics modeling in conjunction with wetting analyses showed that laser ablating either one of the electrodes led to substantial improvements in wetting and rate capability, indicating that substantial performance benefits can be achieved by ablating only the graphite anode as apposed to both electrodes.

25 ENERGY STORAGE↗

Electrochemical Degradation Modes in Bifacial Silicon Photovoltaic Modules

Motivated by the rapidly rising deployment of bifacial monocrystalline-silicon photovoltaics (PV), we investigate the durability of various PV module packaging configurations with transparent coverings on both the front and rear sides of the module. We use a series of bifacial passivated emitter and rear cell (p-PERC) mini-modules with systematically varying outer cover materials (glass/glass, G/G, or glass/transparent backsheet, G/TB) and encapsulant chemistries (poly [ethylene-co-vinyl acetate], EVA; or polyolefin, POE). We study degradation modes over 1,000 hours of combined damp heat (DH) exposure and high system voltages that can cause potential-induced degradation (PID) under positive, zero, or negative 1,000 V cell-to-frame bias. We analyze the degradation modes using a combination of current-voltage measurements, impedance spectroscopy, external quantum efficiency, and spatially resolved luminescence and thermal imaging. Our results highlight various types of degradation including shunting, enhanced recombination, and series resistance increases, and we use spatially resolved characterization to separately identify the localized effects. We show that multiple PID and moisture-ingress degradation modes severely affect EVA-containing modules, with previously reported PID processes under negative-bias DH and a unique observation of rear-side surface recombination in G/EVA/G modules under positive-bias DH. We observe significantly less degradation in POE-containing modules, where the G/POE/G configuration exhibits minimal degradation under all stress conditions that we employ.

14 SOLAR ENERGY↗

Long-Term Degradation of Passivated Emitter and Rear Contact Silicon Solar Cell under Light and Heat

Advanced designs enable high-efficiency solar cells; however, more complex structures create new long-term stability concerns. Herein, the long-term degradation processes affecting advanced silicon solar cells using laboratory-based illumination and heating over hundreds of hours are investigated. The activation energy for the degradation of voltage is estimated and the degradation rates to normal solar cell operating temperature ranges are extrapolated. The cell degradation observed at high temperatures in the lab is kinetically similar to the process affecting field-deployed modules contributing to 0.37% year-1 of annualized degradation. Electroluminescence and photoluminescence mapping show that the degradation is dominated by minority carrier lifetime reduction. Suns-open-circuit voltage and light beam-induced current results indicate that the degradation could result from passivation degradation at the surface or defect formation in the near-subsurface region, leading to increased minority carrier recombination. This work highlights a long-term degradation process under elevated temperature and illumination that may continue to affect cells in an irreversible manner that is separate from recoverable light-induced degradation and light- and elevated temperature-induced degradation.

14 SOLAR ENERGY↗

Multiscale Characterization of Photovoltaic Modules—Case Studies of Contact and Interconnect Degradation

The current popularity of photovoltaic (PV) systems is due in large part to their exceptional reliability and significantly lower cost than other energy sources. Studying cell and module degradation is key to promote further development in the state of the art. Fielded or accelerated aged modules exhibit different failure modes, of which metallization degradation (contacts and interconnections) is prevalent. In this work, we discuss how multiscale characterization methods can be applied to a variety of module technologies that have been field exposed and have undergone accelerated age testing. These methods include performing characterization on the module level, cell level, and finally the materials level. The observed performance losses from the module- and cell-level characterization can be correlated with materials properties to find out the root cause of degradation. We recommend an initial nondestructive characterization suite, including module- and cell-level current-voltage ( I--V ), Suns-V OC , photoluminescence and electroluminescence imaging, quantum efficiency, ultraviolet fluorescence imaging, and thermal infrared imaging. Samples are then extracted from particularly degraded regions of the module and prepared for materials characterization techniques, such as top-down and cross-sectional scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, Raman spectroscopy, and transmission electron microscopy, allowing a deeper look into the mechanism behind the metallization degradation. This article serves as an instructional review to introduce the different multiscale characterization methods and how they can be effectively applied to perform PV degradation studies. Furthermore, we also share some of our examples and discuss the strengths, limitations, and best practices for each of the characterization techniques.

14 SOLAR ENERGY↗

Linking Transient Voltage to Spatially-Resolved Luminescence Imaging to Understand Reliability of Perovskite Photovoltaics

In this work, we present a methodology to separate effects of perovskite device metastability from irreversible degradation, using stress/rest cycling under constant current bias while collecting a series of electroluminescence images and continuously monitoring voltage. We develop a simulation model and procedures for image processing to better understand the effects of ion parameters on the transient nature of voltage and evolving electroluminescence images.

electroluminescence↗

Glass/glass photovoltaic module reliability and degradation: a review

Glass/glass (G/G) photovoltaic (PV) module construction is quickly rising in popularity due to increased demand for bifacial PV modules, with additional applications for thin-film and building-integrated PV technologies. G/G modules are expected to withstand harsh environmental conditions and extend the installed module lifespan to greater than 30 years compared to conventional glass/backsheet (G/B) modules. With the rapid growth of G/G deployment, understanding the outdoor performance, degradation, and reliability of this PV module construction becomes highly valuable. In this review, we present the history of G/G modules that have existed in the field for the past 20 years, their subsequent reliability issues under different climates, and methods for accelerated testing and characterization of both cells and packaging materials. We highlight some general trends of G/G modules, such as greater degradation when using poly(ethylene-co-vinyl acetate) (EVA) encapsulants, causing the industry to move toward polyolefin-based encapsulants. Transparent backsheets have also been introduced as an alternative to the rear glass for decreasing the module weight and aiding the effusion of trapped gaseous degradation products in the laminate. New amendments to IEC 61215 standard protocols for G/G bifacial modules have also been proposed so that the rear side power generation and UV exposure will be standardized. We further summarize a suite of destructive and non-destructive characterization techniques, such as current-voltage scans, module electro-optical imaging, adhesion tests, nanoscale structural/chemical investigation, and forensic analysis, to provide deeper insights into the fundamental properties of the module materials degradation and how it can be monitored in the G/G construction. This will set the groundwork for future research and product development.

14 SOLAR ENERGY↗

Linking Transient Voltage to Spatially-Resolved Luminescence Imaging to Understand Reliability of Perovskite Photovoltaics: Preprint

In this work, we present a methodology to separate effects of perovskite device metastability from irreversible degradation, using stress/rest cycling under constant current bias while collecting a series of electroluminescence images and continuously monitoring voltage. We develop a simulation model and procedures for image processing to better understand the effects of ion parameters on the transient nature of voltage and evolving electroluminescence images.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Interplay between microstructure, defect states, and mobile charge generation in transition metal dichalcogenide heterojunctions

Two-dimensional transition metal dichalcogenides (2D-TMDCs) have gained attention for their promise in next-generation energy-harvesting and quantum computing technologies, but realizing these technologies requires a greater understanding of TMDC properties that influence their photophysics. To this end, we discuss here the interplay between TMDC microstructure and defects with the charge generation yield, lifetime, and mobility. As a model system, we compare monolayer-only and monolayer-rich MoS 2 grown by chemical vapor deposition, and we employ the TMDCs in Type-II charge-separating heterojunctions with semiconducting single-walled carbon nanotubes (s-SWCNTs). Our results suggest longer lifetimes and higher yields of mobile carriers in samples containing a small fraction of defect-rich multilayer islands on predominately monolayer MoS 2 . Compared to the monolayer-only heterojunctions, the carrier lifetimes increase from 0.73 μs to 4.71 μs, the hole transfer yield increases from 23% to 34%, and the electron transfer yield increases from 39% to 59%. We reach these conclusions using a unique combination of microwave photoconductivity (which probes only mobile carriers) along with transient absorption spectroscopy (which identifies spectral signatures unique to each material and type of photoexcited quasiparticle, but does not probe mobility). Overall, our results highlight the substantial changes in photophysics that can occur from small changes in TMDC microstructure and defect density, where the presence of defects does not necessarily preclude improvements in charge generation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

UV-Fluorescence Imaging of Silicon PV Modules After Outdoor Aging and Accelerated Stress Testing

Fast, non-destructive, outdoor-compatible methods for photovoltaic module characterization are essential for monitoring module quality without disrupting energy production. UV-fluorescence (UVF) imaging of the encapsulant layer can be used for crack detection in the field. We show that UVF patterns vary widely between modules and types of applied stress. We propose that combining accelerated stress testing (e.g. thermal cycling and damp heat) with field investigations can help build understanding of different types of UVF, which are formed and subsequently quenched at varying rates. Ultimately, such understanding could enable estimating when cracks were formed.

41 EE - Solar Energy Technologies Office (EE-4S)↗