Engineering topics

Sulas-Kern, Dana B.

Publications and source records attributed to Sulas-Kern, Dana B..

24 records · Page 2

DOE OSTI2021

Local Resistance Measurement for Degradation of c-Si Heterojunction with Intrinsic Thin Layer (HIT) Solar Modules

Silicon heterojunction with intrinsic thin layer (or HIT) modules typically degrade at a rate of less than 1% annually in solar fields with dominant degradation in open-circuit voltage and some degradation in series resistance. However, detailed mechanisms can differ from module to module. Here, we study increases in local series resistance that occur over long-term field deployment, indicated by cell areas where the photoluminescence intensity does not degrade but the electroluminescence degrades significantly. To directly measure the local series resistance, we have cored out the local electroluminescence-degraded area, and we measured the sheet resistance by 4-point-probe and local nm-scale resistance using scanning spreading resistance microscopy (SSRM). The results by 4-point-probe show scattered sheet resistance that can be caused, for example, by nonuniform current paths through the transparent conductive oxide layer, the a-Si:H emitter, or the near-junction c-Si inversion layer. In contrast, the SSRM results indicate a relatively uniform and non-degraded resistivity on smaller nanometer spatial scales. SSRM is an atomic force microscopy-based two-terminal resistance mapping technique that measures the local resistance in nm-volume beneath the probe. The consistent resistances measured on the control and degraded samples can exclude the degradation of transparent conductive oxide resistance.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2020

High Efficiency Silicon Module Degradation - From Atoms to Systems: Preprint

For PV to be cost competitive with traditional energy sources reliability is of critical importance. Historically, PV reliability has focused on the module packaging because degradation and failure modes were directly linked to the packaging. Today, in addition to module packaging cell related reliability issues can be observed. We show that silicon heterojunction (SHJ) degradation is directly linked to the re-distribution of hydrogen (H) near the interface between the amorphous-silicon (a-Si) and silicon bulk. PERC modules show a similar decline in carrier lifetime indicating that not the packaging but the cells are also changing during field exposure. Examination of a stressed PERC cell showed a similar H redistribution in the cell. Understanding the degradation mechanism at the atomic level is important in facilitating possible mitigating mechanisms and more accurately projecting performance.

degradation↗

DOE OSTI2020

The 2020 photovoltaic technologies roadmap

Over the past decade, the global cumulative installed photovoltaic (PV) capacity has grown exponentially, reaching 591 GW in 2019. Rapid progress was driven in large part by improvements in solar cell and module efficiencies, reduction in manufacturing costs and the realization of levelized costs of electricity that are now generally less than other energy sources and approaching similar costs with storage included. Given this success, it is a particularly fitting time to assess the state of the photovoltaics field and the technology milestones that must be achieved to maximize future impact and forward momentum. This roadmap outlines the critical areas of development in all of the major PV conversion technologies, advances needed to enable terawatt-scale PV installation, and cross-cutting topics on reliability, characterization, and applications. Each perspective provides a status update, summarizes the limiting immediate and long-term technical challenges and highlights breakthroughs that are needed to address them. In total, this roadmap is intended to guide researchers, funding agencies and industry in identifying the areas of development that will have the most impact on PV technology in the upcoming years.

14 SOLAR ENERGY↗

DOE OSTI2020

Dark Lock-in Thermography Identifies Solder Bond Failure as the Root Cause of Series Resistance Increase in Fielded Solar Modules

Correlating the electrical performance of photovoltaic modules to the spatially resolved photoluminescence, electroluminescence, and dark lock-in thermography (DLIT) images is an important long-term goal for developing solar cell technology. These images offer highly sophisticated and detailed information about the spatial distribution and (if imaged at successive time intervals) temporal degradation of local series and shunt resistances. There have been extensive studies to correlate these imaging techniques to local characteristics at the cell level. However, it has been difficult to extract and quantify module-level information from the techniques. In this study, we interpret module current-voltage (I-V) measurements along with corresponding DLIT images within a module-scale simulation framework, demonstrating that series resistance degradation of the module I-V characteristics, in this case, can be attributed to solder bond failures. Our simulations highlight how current crowding associated with a failed solder joint (or a section of the solder pad) translates to the characteristic point-like (asymmetric doublet) heating pattern in neighboring solder joints (or the neighboring regions of the solder pad). Overall, the correlation between series resistance and solder joint degradation could inform expedited diagnosis of field degradation of solar modules.

42 ENGINEERING↗

DOE OSTI2020

Chapter 6: Luminescence and Thermal Imaging of Thin-Film Photovoltaic Materials, Devices, and Modules

In this chapter, we describe luminescence and thermal imaging in the context of thin-film PV devices. First, we discuss both traditional and developing experimental designs, including dark LIT (DLIT), illuminated LIT, PL using different illumination configurations, traditional EL performed under forward -bias current injection, and contactless EL induced with sub -cell illumination patterns. Next, we provide some brief theoretical background to highlight relationships between fundamental materials properties and the resulting luminescence and thermal images. Finally, we give examples of thin-film PV PL, EL, and LIT images to demonstrate the utility of these imaging methods ranging from understanding the microstructure of active layers to managing the quality and reliability of full PV modules.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2020

Methods for In Situ Electroluminescence Imaging of Photovoltaic Modules Under Varying Environmental Conditions

Electroluminescence (EL) imaging is a powerful tool used to identify defects in photovoltaic solar cells. Typically, this type of characterization is performed in the dark using a current injection that equals short-circuit current measured at standard test conditions (STC). Restricting imaging to such a temperature range limits the information obtained about the module and cells. However, it is not trivial to develop a tool that would allow for EL imaging to be performed under a wider range of temperatures. Here we demonstrate an in situ EL imaging capability developed within an environmental chamber that allows for control of sample temperatures between –40 and 90 °C. Additionally, we demonstrate EL imaging of 4-cell mini-modules (MiMo) under front-side mechanical loading. A Raspberry Pi-connected camera with short-pass filter removed is used for EL imaging. The camera is low-cost with a small form-factor, appropriate for use in a harsh, enclosed environment. The camera is installed within a thermally isolating housing mounted within the environmental chamber. Three example cases are given for MiMos that exhibit various forms of degradation including solder fatigue and cell cracking. It is shown that by measuring at conditions above and below STC, different behaviors may be identified. In some cases, restricting characterization to STC may lead to a failure to detect damage existing in the sample.

14 SOLAR ENERGY↗