Engineering topics
Publications and source records attributed to Sun, Min.
A vertical semiconductor transistor and a method of forming the same. A vertical semiconductor transistor has at least one semiconductor region, a source, and at least one gate region. The at least one semiconductor region includes a III-nitride semiconductor material. The source is formed over the at least one semiconductor region. The at least one gate region is formed around at least a portion of the at least one semiconductor region.
Highlights: • Omentin-1 inhibited ox-LDL-induced THP-1 attachment to HUVECs. • Omentin-1 mitigated ox-LDL-induced expression of VCAM-1 and E-selectin. • Omentin-1 attenuated ox-LDL-induced reduction of KLF2 and its target genes. • The effects of omentin-1 on the expression of KLF2 are mediated by p53. Oxidation of low-density lipoproteins (ox-LDL) plays a critical role in endothelial dysfunction and the pathological progression of atherosclerosis by causing leukocyte attachment to endothelial surfaces. Omentin-1, an important adipokine primarily secreted by stromal vascular cells, has displayed various biological functions in diverse tissues. However, little information regarding the effects of omentin-1 on ox-LDL- induced endothelial dysfunction has been reported before. In the current study, we found that omentin-1 significantly reduced the attachment of the leukocyte THP-1 cells to human umbilical vein endothelial cells (HUVECs) in a dose dependent manner. Additionally, omentin-1 treatment prevented the expression of cell adhesion molecules such as VCAM-1 and E-selectin at both the mRNA level and the protein level. Notably, we found that omentin-1 significantly restored ox-LDL-induced reduction of KLF2, an important transcriptional factor and regulator of endothelial function. Also, omentin-1 promoted the expression of KLF2 target genes eNOS and PAI-1. Mechanistically, our results indicate that the effects of omentin-1 on KLF2 expression are mediated by p53. These results highlight the potential of omentin-1 in preventing endothelial dysfunction and atherosclerosis.
This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n−-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n+-GaN. The actual on-resistance of the drift region significantly depends on this current distribution rather than the intrinsic resistivity of the drift layer. As a result, the total specific on-resistance of quasi-vertical diodes shows a strong correlation with the device area and sheet resistance of the current spreading layer. By reducing the sheet resistance of the current spreading layer, the specific on-resistance of quasi-vertical GaN-on-Si power diodes has been reduced from ∼10 mΩ·cm2 to below 1 mΩ·cm2. Design space of the specific on-resistance at different breakdown voltage levels has also been revealed in optimized quasi-vertical GaN power diodes.
Trench formation and corner rounding are the key processes to demonstrate high-voltage trench-based vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled plasma dry etching conditions and applying the rounding technology, two main trench shapes were demonstrated: flat-bottom rounded trench and tapered-bottom rounded trench. TCAD simulations were then performed to investigate the impact of trench shapes and round corners on device blocking capability. GaN trench metal-insulator-semiconductor barrier Schottky rectifiers with different trench shapes were fabricated and characterized. A breakdown voltage over 500 V was obtained in the device with flat-bottom rounded trenches, compared to 350 V in the device with tapered-bottom rounded trenches and 150 V in the device with non-rounded trenches. Both experimental and simulation results support the use of rounded flat-bottom trenches to fabricate high-voltage GaN trench-based power devices.
A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.