DOE OSTI · 1568188
Structures for nitride vertical transistors
Abstract
A vertical semiconductor transistor and a method of forming the same. A vertical semiconductor transistor has at least one semiconductor region, a source, and at least one gate region. The at least one semiconductor region includes a III-nitride semiconductor material. The source is formed over the at least one semiconductor region. The at least one gate region is formed around at least a portion of the at least one semiconductor region.
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Sun, Min, Palacios, Tomas Apostol. 2019-04-09. Structures for nitride vertical transistors. https://www.osti.gov/biblio/1568188
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