Advanced methodology for capturing product metadata
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Publications and source records attributed to Sun, Q..
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In this paper, we will introduce the functional elements in the Keck Interferometer Science Operations System; describe the common SOS core elements that KI and the Space Interferometry Mission will share; and provide prospective users of these facilities an introduction to user support model that the Interferometry Science Center is implementing.
A flight mission of NASA GSFC's Laser Vegetation Imaging Sensor (LVIS) is planned for June-August 2003 in the Amazon region of Brazil. The goal of this flight mission is to map the vegetation height and structure and ground topography of a large area of the Amazon. This data will be used to produce maps of true ground topography, vegetation height, and estimated above-ground biomass and for comparison with and potential calibration of Synthetic Aperture Radar (SAR) data. Approximately 15,000 sq. km covering various regions of the Amazon will be mapped. The LVIS sensor has the unique ability to accurately sense the ground topography beneath even the densest of forest canopies. This is achieved by using a high signal-to-noise laser altimeter to detect the very weak reflection from the ground that is available only through small gaps in between leaves and between tree canopies. Often the amount of ground signal is 1% or less of the total returned echo. Once the ground elevation is identified, that is used as the reference surface from which we measure the vertical height and structure of the vegetation. Test data over tropical forests have shown excellent correlation between LVIS measurements and biomass, basal area, stem density, ground topography, and canopy height. Examples of laser altimetry data over forests and the relationships to biophysical parameters will be shown. Also, recent advances in the LVIS instrument will be discussed.
This paper describes the architecture of the AIRS Science Processing System (SPS) used to process AIRS data.
Plants grown in spaceflight conditions are more susceptible to colonization by plant pathogens. The underlying causes for this enhanced susceptibility are not known. Possibly the formation of structural barriers and the activation of plant defense response components are impaired in spaceflight conditions. Either condition would result from altered gene expression of the plant. Because of the tools available, past studies focused on a few physiological responses or biochemical pathways. With recent advances in genomics research, new tools, including microarray technologies, are available to examine the global impact of growth in the spacecraft on the plant's gene expression profile. In ground-based studies, we have developed cDNA subtraction libraries of rice that are enriched for genes induced during pathogen infection and the defense response. Arrays of these genes are being used to dissect plant defense response pathways in a model system involving wild-type rice plants and lesion mimic mutants. The lesion mimic mutants are ideal experimental tools because they erratically develop defense response-like lesions in the absence of pathogens. The gene expression profiles from these ground-based studies will provide the molecular basis for understanding the biochemical and physiological impacts of spaceflight on plant growth, development and disease defense responses. This, in turn, will allow the development of strategies to manage plant disease for life in the space environment.
InGaAs/GaAs heterostructures grown on (001) substrates by low-pressure MOVPE exhibit a measurable anisotropy in their structural, optical and electrical properties. This anisotropy occurs in structures which have undergone partial or complete strain relaxation and it can be strongly reduced by using slightly misoriented substrates. A comparison with similar structures grown by CBE indicates that this anisotropy is less important. This study suggests that strain relaxation is achieved by a combination of several mechanisms whose relative importance depends on the orientation of the substrate and on growth temperature which varies with the growth technique.
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The microscale characterization of electronic defects in (SI) GaAs has been a challenging issue in connection with materials problems encountered in GaAs IC technology. The main obstacle which limits the applicability of high resolution electron beam methods such as Electron Beam-Induced Current (EBIC) and cathodoluminescence (CL) is the low concentration of free carriers in semiinsulating (SI) GaAs. The present paper provides a new photo-EBIC characterization approach which combines the spectroscopic advantages of optical methods with the high spatial resolution and scanning capability of EBIC. A scanning electron microscope modified for electronic characterization studies is shown schematically. The instrument can operate in the standard SEM mode, in the EBIC modes (including photo-EBIC and thermally stimulated EBIC /TS-EBIC/), and in the cathodo-luminescence (CL) and scanning modes. Attention is given to the use of CL, Photo-EBIC, and TS-EBIC techniques.