Proton Induced Optical Degradation in InGaAs/GaAs Quantum Confined Structures
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Engineering topics
Publications and source records attributed to Swift, G..
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In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer.
This paper summarizes single event upset and latchup data from 1996 to 1998 from numerous sources.
Proton upset effects in optocouplers were reported by LaBel, et al. that showed an unexpected increase in cross section for incident angles above 80 degrees.
Flash memories have evolved very rapidly in recent years.
Three types of heavy-ion upsets occurred in an advanced FPGA-configuration PROM: (1) address errors, (2) premature end-of-program signals, and (3) functional interrupt. The threshold Lets were near 5 MeV-cm***sup2***/mg.
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Star trackers are a reliable and accurate device used by almost all spacecraft in order to autonomously determine their orientation.
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Advanced commercial DRAMs are particularly attractive to designers for space applications needing large memory arrays due to resulting savings in mass, volume, and power.
Breakdown of gate oxides from heavy ions is investigated.
Single-event upset is investigated for optocouplers.
Single-event gate rupture (SEGR)in vertical power MOSFETs is induced by charge deposited in the epitaxial region (below the gate oxide) in concert with the weakening of the oxide, both are a result of the ion passage.
Destructive single event effects (DSEE) are a main concern for pioneers attempting to use COTS (commercial-off-the-shelf) devices in space, so a COTS instrument full of such devices is particulary scary.
Features of flash memories: Flash memories are non-volatile; that is they do not require power to retain the information in its memory. They can be erased and written to while the device is still in the circuit.
Manufacturers of field programmable gate arrays (FPGAS) take different technological and architectural approaches that directly affect radiation performance. Similar y technological and architectural features are used in related technologies such as programmable substrates and quick-turn application specific integrated circuits (ASICs). After analyzing current technologies and architectures and their radiation-effects implications, this paper includes extensive test data quantifying various devices total dose and single event susceptibilities, including performance degradation effects and temporary or permanent re-configuration faults. Test results will concentrate on recent technologies being used in space flight electronic systems and those being developed for use in the near term. This paper will provide the first extensive study of various configuration memories used in programmable devices. Radiation performance limits and their impacts will be discussed for each design. In addition, the interplay between device scaling, process, bias voltage, design, and architecture will be explored. Lastly, areas of ongoing research will be discussed.
In this paper we describe observed failures of optocouplers on the TOPEX/Poseidon (T/P) ocean measuring satellite. An indirect assessment is made of proton doses by the spacecraft, and these data are compared with laboratory proton irradiations of optocouplers. It is shown that the T/P failures occur at expected doses for proton-induced displacement damage.
Radiation effects and testing programs on commercial off-the-shelf (COTS) devices and circuits, which are important for NASA programs, are discussed. Demands for increased performance levels in spacecraft systems is stimulating the use of electronic and photonic devices. Some advances in electronics to reach high performance will result in the miniaturization of devices, which will lead to increased radiation vulnerability.