Search NASA⌕ Search

Engineering topics

Thom, R. D.

Publications and source records attributed to Thom, R. D..

9 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Low-background InSb array development

Photovoltaic indium antimonide (PV InSb) detector technology has matured over the past several years to enable a wide variety of applications to use this high-performance detector material to advantage. The operating conditions for most of the applications to date for back-side illuminated PV InSb arrays have encompassed focal plane temperatures ranging from 40 to approximately 95 K, with the majority in the narrower range between 60 and 80 K. Background flux conditions have ranged from 10 to the 10th power ph/sq cm/sec to 10 to the 16th power ph/sq cm/sec, most typically between 10 to the 12th power and 10 to the 14th power ph/sq cm/sec. Appropriately, the array parameters were optimized for maximum performance over these temperature and background ranges. The key parameters which were peaked in this process were the resistance-area product of the detectors and their quantum efficiency. The Space Infrared Telescope Facility (SIRTF) Infrared Array Camera requirements, however, present very low temperature and background operating conditions, plus the need for very high signal to noise ratios. Preliminary analysis indicates that back-side illuminated PV InSb arrays can be optimized for operation under these conditions, and some performance projections will be presented.

Thom, R. D.↗
NASA NTRS1981

Advanced indium antimonide monolithic charge coupled infrared imaging arrays

The continued process development of SiO2 insulators for use in advanced InSb monolithic charge coupled infrared imaging arrays is described. Specific investigations into the use of plasma enhanced chemical vapor deposited (PECVD) SiO2 as a gate insulator for InSb charge coupled devices is discussed, as are investigations of other chemical vapor deposited SiO2 materials.

Koch, T. L.↗
NASA NTRS1981

Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

Koch, T. L.↗
NASA NTRS1980

InSb charge coupled infrared imaging device: The 20 element linear imager

The design and fabrication of the 8585 InSb charge coupled infrared imaging device (CCIRID) chip are reported. The InSb material characteristics are described along with mask and process modifications. Test results for the 2- and 20-element CCIRID's are discussed, including gate oxide characteristics, charge transfer efficiency, optical mode of operation, and development of the surface potential diagram.

Thom, R. D.↗
NASA NTRS1980

A fully monolithic InSb infrared CCD array

Fully monolithic infrared CCD arrays fabricated in InSb are described. The process used in fabrication includes planar junction formation by ion implantation, and an aluminum and SiO2 overlapping CCD gate structure which makes use of conventional chemical and plasma etching. IR detection and readout is demonstrated with the arrays.

Thom, R. D.↗
NASA NTRS1979

Monolithic InSb imaging arrays with charge-coupled device /CCD/ readout

The paper demonstrates the detection of infrared radiation and signal readout on a monolithic InSb charge coupled infrared imaging device. The device is a 20-element linear imager with MOS detectors coupled to a four-phase, surface-channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for zero input and charge readout. Sensitivity measurements on the MOS infrared detectors were determined for the 20-element array. Data are presented on the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both multiplexed and a time delay and integration (TDI) mode. Plans are discussed for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager.

Miller, W. E.↗
NASA NTRS1978

Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

Thom, R. D.↗
NASA NTRS1976

InSb arrays with CCD readout for 1.0- to 5.5-microns infrared applications

There were two approaches for fabricating indium antimonide (InSb) arrays with CCD readout discussed. The hybrid approach integrated InSb detectors and silicon CCDs in a modular assembly via an advanced interconnection technology. In the monolithic approach, the InSb infrared detectors and the CCD readout were integrated on the same InSb chip. Both approaches utilized intrinsic (band-to-band) photodetection with the attendant advantages over extrinsic detectors. The status of each of these detector readout concepts, with pertinent performance characteristics, was presented.

Phillips, J. D.↗