Single Event Effects Test Report IXYS IXTA96P085T P-Channel -85V MOSFET
This study was undertaken to determine the destructive single event effect and degradation susceptibility of the IXTA96P085T P-Channel -85V MOSFET from IXYS. The device was monitored for destructive single event effects and degradation during exposure to a heavy ion beam at the Berkeley Accelerator Space Effects (BASE) Facility at the Lawrence Berkeley National Laboratory (LBNL). Gate and drain currents were measured during irradiation and a basic set of electrical characterizations was performed following each fluence exposure to assess heavy ion induced damage. The test date was April 10, 2024. This characterization is application specific.