Engineering topics
Publications and source records attributed to Tietjen, J..
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.
Use of ultrahigh purity ammonia prevents oxygen contamination of GaN during growth, making it possible to grow the GaN at temperatures as high as 825 degrees C, at which point single crystal wafers are deposited on /0001/-oriented sapphire surfaces.
Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.
Improved substrate holder preferentially provides more uniform substrate cooling and increases the proportion of vapor flowing over the substrate during growth. Nitrogen gas is constricted in the substrate holder to cool the substrate.