NASA NTRS · 19700000482
P-n junctions formed in gallium antimonide
Abstract
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.
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Clough, R., Richman, D., Tietjen, J.. 1970-11-01. P-n junctions formed in gallium antimonide. https://ntrs.nasa.gov/citations/19700000482
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