Characterizing the Josephson Effect on Ba-122 Single-Crystal Junctions
This paper presents c-direction hybrid Josephson junctions with base electrodes of Co:BaFe{sub 2}As{sub 2} single crystals. To realize Josephson junctions, it applies standard photolithography technologies and a newly developed surface polishing method that was used. As conventional isotropic s-wave superconductor counter electrodes used double layers of Pb/In. The artificial barrier for the tunneling junctions consists of a thin sputtered Ti layer or a thermally evaporated Al layer; both layers were used as an insulator barrier. For characterizing the Josephson effects with TiO{sub x} barrier, we could realize I{sub c}R{sub N} products of about 13.7 μV and unconventional I{sub c}-T dependencies. The formation of Shapiro steps under the influence of microwave irradiation and magnetic field to the junctions will be discussed as well.