Engineering topics

Uematsu, Masashi

Publications and source records attributed to Uematsu, Masashi.

5 records

DOE OSTI2015

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers

Si self-diffusion in the presence of end-of-range (EOR) defects is investigated using {sup nat}Si/{sup 28}Si isotope multilayers. The isotope multilayers were amorphized by Ge ion implantation, and then annealed at 800–950 °C. The behavior of Si self-interstitials is investigated through the {sup 30}Si self-diffusion. The experimental {sup 30}Si profiles show further enhancement of Si self-diffusion at the EOR defect region, in addition to the transient enhanced diffusion via excess Si self-interstitials by EOR defects. To explain this additional enhanced diffusion, we propose a model which takes into account enhanced diffusion by tensile strain originated from EOR defects. The calculation results based on this model have well reproduced the experimental {sup 30}Si profiles.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Electrical activation and electron spin resonance measurements of arsenic implanted in silicon

The electrical activation of arsenic (As) implanted in Si is investigated with electron spin resonance (ESR), spreading resistance (SR), and secondary ion mass spectroscopy (SIMS). The As ions were implanted with a dose of 1 × 10{sup 12 }cm{sup −2} and subsequently annealed at various temperatures in the range of 500–1100 °C. The ESR measurements at 10 K show that the density of the As donor electrons for all the annealing temperatures is less than 10% of the As atom concentration measured by SIMS. The SR data indicate that the density of conduction band electrons is several times larger than that of the As donor electrons. These results strongly suggest that most of the As donor electrons are ESR inactive at low temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2012

Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials

Diffusion of co-implanted carbon (C) and boron (B) in silicon (Si) and its effect on excess Si self-interstitials (I's) after annealing at 800 and 1000 deg. C were investigated by means of secondary ion mass spectrometry. The experimental results showed that C diffusion was not significant at 800 and 1000 deg. C but later became visible for longer annealing times at 1000 deg. C. B diffusion was reduced by the presence of C when no significant C diffusion was observed, but it was enhanced when C diffusion was observed. These results indicate that all implanted C atoms form immobile CI clusters with excess I in the amount of implanted C and that these CI clusters are stable and trap I to reduce B diffusion. On the contrary, CI clusters are dissolved to emit I for longer annealing times at 1000 deg. C and both B and C diffusion are enhanced. Diffusion simulation based on these models fits the experimental profiles of B and C.

36 MATERIALS SCIENCE↗

DOE OSTI2011

Self-diffusion in compressively strained Ge

Under a compressive biaxial strain of {approx} 0.71%, Ge self-diffusion has been measured using an isotopically controlled Ge single-crystal layer grown on a relaxed Si{sub 0.2}Ge{sub 0.8} virtual substrate. The self-diffusivity is enhanced by the compressive strain and its behavior is fully consistent with a theoretical prediction of a generalized activation volume model of a simple vacancy mediated diffusion, reported by Aziz et al.[Phys. Rev. B 73, 054101 (2006)]. The activation volume of (-0.65{+-}0.21) times the Ge atomic volume quantitatively describes the observed enhancement due to the compressive biaxial strain very well.

36 MATERIALS SCIENCE↗