Self-diffusion in compressively strained Ge

Abstract

Under a compressive biaxial strain of {approx} 0.71%, Ge self-diffusion has been measured using an isotopically controlled Ge single-crystal layer grown on a relaxed Si{sub 0.2}Ge{sub 0.8} virtual substrate. The self-diffusivity is enhanced by the compressive strain and its behavior is fully consistent with a theoretical prediction of a generalized activation volume model of a simple vacancy mediated diffusion, reported by Aziz et al.[Phys. Rev. B 73, 054101 (2006)]. The activation volume of (-0.65{+-}0.21) times the Ge atomic volume quantitatively describes the observed enhancement due to the compressive biaxial strain very well.