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Vandersande, Jan W.

Publications and source records attributed to Vandersande, Jan W..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Stable metallization for diamond and other materials

An adherent and metallurgically stable metallization system for diamond is presented. The big improvement in metallurgical stability is attributed to the use of a ternary, amorphous Ti--Si--N diffusion barrier. No diffusion between the layers and no delamination of the metallization was observed after annealing the schemes at 400.degree. C. for 100 hours and at 900.degree. C. for 30 minutes. Thermal cycling experiments in air from -65 to 155.degree. C. and adhesion tests were performed. Various embodiments are disclosed.

Bachli, Andreas↗
NASA NTRS1993

Electrical Conductivity Of Diamond Up To 1,200 Degrees C

Report discusses measurements of electrical conductivities of two synthetic diamond films, three synthetic diamondlike films, and two natural type IIa diamonds at temperatures from ambient to 1,200 degrees C. Measurements performed to compare electrical conductivities of state-of-the-art diamond films with those of natural insulating diamond, particularly at temperatures above 700 degrees C.

Vandersande, Jan W.↗
NASA NTRS1992

Irradiation By Neutrons And Annealing of SiGe Alloys

Heat treatment restores thermoelectric performance having deteriorated under irradiation by neutrons. Discovery suggests SiGe materials used in radioisotope thermoelectric generators and other applications up to fluences of 5.4 X 10(to the 19th power)cm(to the negative 2nd power) and operating at temperatures of 600 to 1,000 degrees C.

Vandersande, Jan W.↗
NASA NTRS1992

Mathematical Modeling Of A Nuclear/Thermionic Power Source

Report discusses mathematical modeling to predict performance and lifetime of spacecraft power source that is integrated combination of nuclear-fission reactor and thermionic converters. Details of nuclear reaction, thermal conditions in core, and thermionic performance combined with model of swelling of fuel.

Vandersande, Jan W.↗
NASA NTRS1992

Advanced materials for high-temperature thermoelectric energy conversion

A number of refractory semiconductors are under study at the Jet Propulsion Laboratory for application in thermal to electric energy conversion for space power. The main thrust of the program is to improve or develop materials of high figure of merit and, therefore, high conversion efficiencies over a broad temperature range. Materials currently under investigation are represented by silicon-germanium alloys, lanthanum telluride, and boron carbide. The thermoelectric properties of each of these materials, and prospects for their further improvements, are discussed. Continued progress in thermoelectric materials technology can be expected to yield reliable space power systems with double to triple the efficiency of current state of the art systems.

Vining, Cronin B.↗
NASA NTRS1991

Effect of microstructure and composition on the improvement of n-type SiGe/GaP material

Experimental and theoretical work has been conducted at the Jet Propulsion Laboratory to improve the thermoelectric properties of n-type SiGe materials. Particular emphasis has been placed upon the understanding of the differences in dopant solid solubilities when multidoping with both Ga and P instead of P alone, as in standard SiGe alloys. A set of various experimental techniques for obtaining heavily doped hot-pressed samples coupled with thermodynamic theoretical considerations was used to relate microstructure and composition to electrical and thermal transport properties. Application of these results to high-temperature heat treatments of several SiGe/GaP samples achieved substantial improvements of the thermoelectric figure of merit Z, with average values close to 1 x 10-3K-1 over the 600-1000 C temperature range. A set of systematic anneals on heavily doped SiGe/GaP materials is reported in an attempt to consistently reproduce the optimized thermoelectric properties.

Fleurial, Jean-Pierre↗
NASA NTRS1991

Effect of small scattering centers on the thermoelectric properties of p-type SiGe alloys

Theory predicts that the addition of ultra-fine, inert, phonon-scattering centers to thermoelectric materials will reduce their thermal conductivity. To investigate this prediction, ultrafine particulates (20 to 120 A) of silicon nitride have been added to boron-doped, p-type, 80/20 SiGe. All of the SiGe samples produced from ultrafine powder have lower thermal conductivities than standard SiGe, but high-temperature heat treatment increases the thermal conductivity back to the value for standard SiGe. However, the SiGe samples with silicon nitride, inert, phonon-scattering centers retained the lower thermal conductivity after several heat treatments. A reduction of approximately 25 percent in thermal conductivity has been achieved in these samples. The magnitude of the reduction agrees with theoretical predictions.

Beaty, John S.↗
NASA NTRS1990

Effect of neutron irradiation on the thermoelectric properties of SiGe alloys

Zone-leveled and hot-pressed n- and p-type Si80Ge20 alloys were irradiated with neutrons to a fluence of 4 x 1018 n/sq cm and to a fluence of 5.4 x 1019 n/sq cm at a temperature of approximately 200-300 C. The effect of neutron irradiation on the thermoelectric properties of these alloys was evaluated. The carrier concentration and mobility (and hence the resistivity) were measured at room temperature while the thermal diffusivity was measured at 177-192 C both before and after the irradiation and after each subsequent 2-h heat treatment at 350 C, 600, and 1000 C. The irradiation increased the resistivity significantly, but the thermal conductivity decreased only by about 10-15 percent. This tends to indicate that the radiation produced only small defects (single pairs and small vacancy chains). The samples all returned to almost exactly their preirradiation state after the 1000 C anneal. This indicates that SiGe alloys can be operated in this neutron fluence at high temperatures without a degradation of thermoelectric properties.

Vandersande, Jan W.↗
NASA NTRS1989

Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

Vandersande, Jan W.↗
NASA NTRS1988

Computerized Analysis Of Thermal-Diffusivity Data

Improved data-acquisition and data-analysis system for thermal-diffusivity measurements using flash method incorporates digital oscilloscope and microcomputer for rapid reduction of experimental data. In thermal-diffusivity apparatus thin specimen heated on one face by pulsed xenon flashlamp, subsequent temperature rise on opposite face monitored by infrared detector. Thermal diffusivity estimated from thickness of specimen and from time after initial pulse during which temperature rise reaches half maximum value. Accuracy of estimate improved by correcting temperature measurements for radiative loss of heat from specimen and for finite duration and specific waveform of flashlamp pulse. System devised for use in high-temperature measurements of thermoelectric materials.

Chmielewski, Artur B.↗
NASA NTRS1988

Improved GaP doped SiGe thermoelectric material

Work at TECO has independently confirmed the early results obtained at JPL that high-temperature heat-treatment of SiGe/GaP alloys can significantly increase the figure of merit Z of these alloys. Several possible reasons for this improvement are given. Experiments are in progress to test these various hypothesis.

Vandersande, Jan W.↗
NASA NTRS1987

Measuring Specific Heats at High Temperatures

Flash apparatus for measuring thermal diffusivities at temperatures from 300 to 1,000 degrees C modified; measures specific heats of samples to accuracy of 4 to 5 percent. Specific heat and thermal diffusivity of sample measured. Xenon flash emits pulse of radiation, absorbed by sputtered graphite coating on sample. Sample temperature measured with thermocouple, and temperature rise due to pulse measured by InSb detector.

Vandersande, Jan W.↗