NASA NTRS · 19880015119
Improved GaP doped SiGe thermoelectric material
Abstract
Work at TECO has independently confirmed the early results obtained at JPL that high-temperature heat-treatment of SiGe/GaP alloys can significantly increase the figure of merit Z of these alloys. Several possible reasons for this improvement are given. Experiments are in progress to test these various hypothesis.
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Vandersande, Jan W., Wood, Charles, Draper, Susan L., Raag, Valvo, Alexander, Michael, Masters, Richard. 1988-01-01. Improved GaP doped SiGe thermoelectric material. https://ntrs.nasa.gov/citations/19880015119
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