Search NASA⌕ Search

Engineering topics

Vasquez, Richard P.

Publications and source records attributed to Vasquez, Richard P..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Method to Improve Indium Bump Bonding via Indium Oxide Removal Using a Multi-Step Plasma Process

A process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics. The multi-step plasma process for removing indium oxide from the indium bumps is more effective in reducing the oxide, and yet does not require the use of halogens, does not change the bump morphology, does not attack the bond pad material or under-bump metallization layers, and creates no new mechanisms for open circuits.

Greer, H. Frank↗
NASA NTRS2009

Two-Step Plasma Process for Cleaning Indium Bonding Bumps

A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

Greer, Harold F.↗
NASA NTRS2005

Nanowire sensors and arrays for chemical/biomolecule detection

We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

sensor array↗
NASA NTRS2004

Electrochemically Grown Single Nanowire Sensors

We report a fabrication technique that is potentially capable of producing arrays of individually addressable nanowire sensors with controlled dimensions, positions, alignments, and chemical compositions. The concept has been demonstrated with electrodeposition of palladium wires with 75 nm to 350 nm widths. We have also fabricated single and double conducting polymer nanowires (polyaniline and polypyrrole) with 100nm and 200nm widths using electrochemical direct growth. Using single Pd nanowires, we have also demonstrated hydrogen sensing. It is envisioned that these are the first steps towards nanowire sensor arrays capable of simultaneously detecting multiple chemical species.

conducting polymer nanowires↗
NASA NTRS1996

Materials For Improved Josephson-Junction Devices

Number of superconductive, normally conductive, and insulating materials proposed for use in fabricating improved superconductor/insulator/superconductor (SIS) and superconductor/normal conductor/superconductor (SNS) electronic devices capable of operation at frequencies up into terahertz range. Such devices particularly useful as electrically nonlinear circuit elements of mixers and local oscillators in heterodyne receivers.

Vasquez, Richard P.↗
NASA NTRS1995

Below-Band-Gap Laser Ablation Of Diamond For TEM

Thin, electron-transparent layers of diamond for examination in transmission electron microscope (TEM) fabricated from thicker diamond substrates by using laser beam to ablate surface of substrate. Involves use of photon energy below band gap. Growing interest in use of diamond as bulk substrate and as coating material in variety of applications has given rise to increasing need for TEM for characterization of diamond-based materials. Below-band-gap laser ablation method helps to satisfy this need. Also applied in general to cutting and etching of diamonds.

George, Thomas↗
NASA NTRS1994

Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

Vasquez, Richard P.↗
NASA NTRS1994

CuC12 by XPS

X-ray photoemission measurements of high purity CuC12 are presented.

CuC12 XPS Cu compounds superconductor superconduct↗
NASA NTRS1994

CuI by XPS

X-ray photoemission measurements of high purity CuI are presented.

X-ray photoemission XPS CuI Cu compounds supercond↗
NASA NTRS1994

CuBr2 by XPS

X-ray photoemission measurements of CuBr2 are presented.

X-ray photoemission CuBr2 Cu superconductor superc↗
NASA NTRS1994

CuC1 by XPS

X-ray photoemission measurements of high purity CuC1 are presented.

X-ray photoemission CuC1 XPS Cu↗
NASA NTRS1994

CuF2 by XPS

X-ray photoemission measurements of CuF2 are presented.

X-ray photoemissions CuF2 XPS superconductor super↗
NASA NTRS1994

CuBr by XPS

X-ray photoemission measurements of high purity CuBr are presented.

X-ray photoemission CuBr XPS Superconductor superc↗
NASA NTRS1993

Long wavelength infrared detector

Long wavelength infrared detection is achieved by a detector made with layers of quantum well material bounded on each side by barrier material to form paired quantum wells, each quantum well having a single energy level. The width and depth of the paired quantum wells, and the spacing therebetween, are selected to split the single energy level with an upper energy level near the top of the energy wells. The spacing is selected for splitting the single energy level into two energy levels with a difference between levels sufficiently small for detection of infrared radiation of a desired wavelength.

Vasquez, Richard P.↗
NASA NTRS1992

SNS Heterojunctions With New Combinations Of Materials

New combinations of materials proposed for superconductor/normal-metal/superconductor (SNS) heterojunctions in low-temperature electronic devices such as fast switches, magnetometers, and mixers. Epitaxial heterojunctions formed between high-temperature superconductors and either oxide semiconductors or metals. Concept offers alternative to other three-layer heterojunction concepts; physical principles of operation permit SNS devices to have thicker barrier layers and fabricated more easily.

Vasquez, Richard P.↗
NASA NTRS1991

Passivation of high temperature superconductors

The surface of high temperature superconductors such as YBa2Cu3O(7-x) are passivated by reacting the native Y, Ba and Cu metal ions with an anion such as sulfate or oxalate to form a surface film that is impervious to water and has a solubility in water of no more than 10(exp -3) M. The passivating treatment is preferably conducted by immersing the surface in dilute aqueous acid solution since more soluble species dissolve into the solution. The treatment does not degrade the superconducting properties of the bulk material.

Vasquez, Richard P.↗