NASA NTRS · 20090022331
Two-Step Plasma Process for Cleaning Indium Bonding Bumps
Abstract
A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.
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Greer, Harold F., Vasquez, Richard P., Jones, Todd J., Hoenk, Michael E., Dickie, Matthew R., Nikzad, Shouleh. 2009-06-01. Two-Step Plasma Process for Cleaning Indium Bonding Bumps. https://ntrs.nasa.gov/citations/20090022331
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