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Vohl, P.

Publications and source records attributed to Vohl, P..

8 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Real-time incoherent-to-coherent optical converter

Description of a real-time incoherent-to-coherent optical converter designed for application in image processing systems. The converter utilizes the photoconductivity effect of the compound Bi(12)SiO(20) for spatial modulation of electrical polarization in the compound. An optically absorbed write-in image is stored as an image polarization pattern in the device. Readout is effectuated electrooptically by using phase retardation in a polarized coherent light beam during the passage through the crystal. The operating mode required for achieving continuous image conversion with a high-speed recyclability is discussed. The performance characteristics of the converter are given and the fabrication technology is described.

Vohl, P.↗
NASA NTRS1972

Optical to optical interface device

The development, fabrication, and testing of a preliminary model of an optical-to-optical (noncoherent-to-coherent) interface device for use in coherent optical parallel processing systems are described. The developed device demonstrates a capability for accepting as an input a scene illuminated by a noncoherent radiation source and providing as an output a coherent light beam spatially modulated to represent the original noncoherent scene. The converter device developed under this contract employs a Pockels readout optical modulator (PROM). This is a photosensitive electro-optic element which can sense and electrostatically store optical images. The stored images can be simultaneously or subsequently readout optically by utilizing the electrostatic storage pattern to control an electro-optic light modulating property of the PROM. The readout process is parallel as no scanning mechanism is required. The PROM provides the functions of optical image sensing, modulation, and storage in a single active material.

Oliver, D. S.↗
NASA NTRS1966

Single-crystal semiconductor films grown on foreign substrates

Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.

Vohl, P.↗