NASA NTRS · 19660000224
Single-crystal semiconductor films grown on foreign substrates
Abstract
Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.
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Vohl, P.. 1966-05-01. Single-crystal semiconductor films grown on foreign substrates. https://ntrs.nasa.gov/citations/19660000224
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