Engineering topics
White, Mark
Publications and source records attributed to White, Mark.
A suite of benchmark and challenge problems for enhanced geothermal systems
A diverse suite of numerical simulators is currently being applied to predict or understand the performance of enhanced geothermal systems (EGS). To build confidence and identify critical development needs for these analytical tools, the United States Department of Energy, Geothermal Technologies Office sponsored a Code Comparison Study (GTO-CCS), with participants from universities, industry, and national laboratories. A principal objective for the study was to create a community forum for improvement and verification of numerical simulators for EGS modeling. Teams participating in the study were those representing U.S. national laboratories, universities, and industries, and each team brought unique numerical simulation capabilities to bear on the problems. Two classes of problems were developed during the study, benchmark problems and challenge problems. The benchmark problems were structured to test the ability of the collection of numerical simulators to solve various combinations of coupled thermal, hydrologic, geomechanical, and geochemical processes. This class of problems was strictly defined in terms of properties, driving forces, initial conditions, and boundary conditions. The challenge problems were based on the enhanced geothermal systems research conducted at Fenton Hill, near Los Alamos, New Mexico, between 1974 and 1995. The problems involved two phases of research, stimulation, development, and circulation in two separate reservoirs. The challenge problems had specific questions to be answered via numerical simulation in three topical areas: (1) reservoir creation/stimulation, (2) reactive and passive transport, and (3) thermal recovery. Whereas the benchmark class of problems were designed to test capabilities for modeling coupled processes under strictly specified conditions, the stated objective for the challenge class of problems was to demonstrate what new understanding of the Fenton Hill experiments could be realized via the application of modern numerical simulation tools by recognized expert practitioners. Lastly, we present the suite of benchmark and challenge problems developed for the GTO-CCS, providing problem descriptions and sample solutions.
Developing EGS Collab Site Geologic Framework Models at the Sanford Underground Research Facility, Lead, South Dakota
The ongoing DOE/GTO funded EGS Collab project aims to stimulate and conduct inter-well flow tests at an intermediate (~10-20 m) in an underground mine in Lead, South Dakota. It is a collaborative initiative where several national laboratories, universities, and other institutions are working together to develop experimental, instrumentation, characterization, and monitoring tools and concepts that could be later employed at a full-scale EGS demonstration FORGE site. In this paper, we describe the development and workflow approach and some preliminary results of earth modeling task for EGS Collab project. We are creating earth models at three different domain scales – EGS Collab, Intermediate, and Large area – using RockWorks 17 software. Local geology, drifts/shafts, and 4850 L boreholes are incorporated in these models. Similarly, available and applicable physical/mechanical properties are also planned to be included in the earth models. Besides providing visualization of the local geology, mine architecture, and bore holes in the test site, the earth modeling task also envision to develop a series of 3-D block models (ASCII files for scattered data/point clouds in the form of X, Y, Z, g) for various physical/mechanical properties of rock. These 3-D block models will provide a consistent baseline value for a parameter of interest to all modeling/simulation groups involved in the EGS Collab project. For this task, we have assembled a preliminary suite of physical/mechanical properties of rocks. Some of the earth modeling results (3-D block models) have been tested by some modeling/simulation team members to test their applicability and for developing additional modeling capability or modifications in RockWorks exported 3-D block models. It is expected that the earth modeling results will be helpful for achieving the overall EGS Collab project objectives.
Commercial Off-The-Shelf (COTS) Parts Risk and Reliability User and Application Guide
All COTS parts are not created equal. Because they are not created equal, the notion that one can force the commercial industry to follow a set of military specifications and standards, along with the certifications, audits and qualification commitments that go with them, is unrealistic for the sale of a few parts. The part technologies that are Defense Logistics Agency (DLA) certified or Military Specification (MS) qualified, are several generations behind the state-of-the-art high-performance parts that are required for the compact, higher performing systems for the next generation of spacecraft and instruments. The majority of the part suppliers are focused on the portion of the market that is producing high-tech commercial products and systems. To that end, in order to compete in the high performance and leading edge advanced technological systems, an alternative approach to risk assessment and reliability prediction must be considered.
CO 2 Accounting and Risk Analysis for CO 2 Sequestration at Enhanced Oil Recovery Sites
Using CO2 in enhanced oil recovery (CO2-EOR) is a promising technology for emissions management because CO2-EOR can dramatically reduce sequestration costs in the absence of emissions policies that include incentives for carbon capture and storage. This study develops a multiscale statistical framework to perform CO2 accounting and risk analysis in an EOR environment at the Farnsworth Unit (FWU), Texas. A set of geostatistical- based Monte Carlo simulations of CO2-oil/gas-water flow and transport in the Morrow formation are conducted for global sensitivity and statistical analysis of the major risk metrics: CO2/water injection/production rates, cumulative net CO2 storage, cumulative oil/gas productions, and CO2 breakthrough time. The median and confidence intervals are estimated for quantifying uncertainty ranges of the risk metrics. A response-surface-based economic model has been derived to calculate the CO2-EOR profitability for the FWU site with a current oil price, which suggests that approximately 31% of the 1000 realizations can be profitable. If government carbon-tax credits are available, or the oil price goes up or CO2 capture and operating expenses reduce, more realizations would be profitable. The results from this study provide valuable insights for understanding CO2 storage potential and the corresponding environmental and economic risks of commercial-scale CO2- sequestration in depleted reservoirs.
Scaled CMOS Reliability and Considerations for Spacecraft Systems: Bottom-Up and Top-Down Perspective
New space missions will increasingly rely on more advanced technologies because of system requirements for higher performance, particularly in instruments and high-speed processing. Component-level reliability challenges with scaled CMOS in spacecraft systems from a bottom-up perspective have been presented. Fundamental Front-end and Back-end processing reliability issues with more aggressively scaled parts have been discussed. Effective thermal management from system-level to the componentlevel (top-down) is a key element in overall design of reliable systems. Thermal management in space systems must consider a wide range of issues, including thermal loading of many different components, and frequent temperature cycling of some systems. Both perspectives (top-down and bottom-up) play a large role in robust, reliable spacecraft system design.
Scaled CMOS Reliability and Considerations for Spacecraft Systems : Bottom-Up and Top-Down Perspectives
The recently launched Mars Science Laboratory (MSL) flagship mission, named Curiosity, is the most complex rover ever built by NASA and is scheduled to touch down on the red planet in August, 2012 in Gale Crater. The rover and its instruments will have to endure the harsh environments of the surface of Mars to fulfill its main science objectives. Such complex systems require reliable microelectronic components coupled with adequate component and system-level design margins. Reliability aspects of these elements of the spacecraft system are presented from bottom- up and top-down perspectives.
Reliability Considerations for Ultra- Low Power Space Applications
NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub- micron region and ULP devices are sought after. Technology trends, ULP microelectronics, scaling and performance tradeoffs, reliability considerations, and spacecraft environments will be presented from a ULP perspective for space applications.
Reliability Considerations of ULP Scaled CMOS in Spacecraft Systems
NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub-micron region. Decreasing the feature size of CMOS devices not only allows more components to be placed on a single chip, but it increases performance by allowing faster switching (or clock) speeds with reduced power compared to larger scaled devices. Higher performance, and lower operating and stand-by power characteristics of Ultra-Low Power (ULP) microelectronics are not only desirable, but also necessary to meet low power consumption design goals of critical spacecraft systems. The integration of these components in such systems, however, must be balanced with the overall risk tolerance of the project.
Users Guide on Scaled CMOS Reliability: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance
Reliability of advanced CMOS technology is a complex problem that is usually addressed from the standpoint of specific failure mechanisms rather than overall reliability of a finished microcircuit. A detailed treatment of CMOS reliability in scaled devices can be found in Ref. 1; it should be consulted for a more thorough discussion. The present document provides a more concise treatment of the scaled CMOS reliability problem, emphasizing differences in the recommended approach for these advanced devices compared to that of less aggressively scaled devices. It includes specific recommendations that can be used by flight projects that use advanced CMOS. The primary emphasis is on conventional memories, microprocessors, and related devices.
Scaled CMOS Technology Reliability Users Guide
The desire to assess the reliability of emerging scaled microelectronics technologies through faster reliability trials and more accurate acceleration models is the precursor for further research and experimentation in this relevant field. The effect of semiconductor scaling on microelectronics product reliability is an important aspect to the high reliability application user. From the perspective of a customer or user, who in many cases must deal with very limited, if any, manufacturer's reliability data to assess the product for a highly-reliable application, product-level testing is critical in the characterization and reliability assessment of advanced nanometer semiconductor scaling effects on microelectronics reliability. A methodology on how to accomplish this and techniques for deriving the expected product-level reliability on commercial memory products are provided.Competing mechanism theory and the multiple failure mechanism model are applied to the experimental results of scaled SDRAM products. Accelerated stress testing at multiple conditions is applied at the product level of several scaled memory products to assess the performance degradation and product reliability. Acceleration models are derived for each case. For several scaled SDRAM products, retention time degradation is studied and two distinct soft error populations are observed with each technology generation: early breakdown, characterized by randomly distributed weak bits with Weibull slope (beta)=1, and a main population breakdown with an increasing failure rate. Retention time soft error rates are calculated and a multiple failure mechanism acceleration model with parameters is derived for each technology. Defect densities are calculated and reflect a decreasing trend in the percentage of random defective bits for each successive product generation. A normalized soft error failure rate of the memory data retention time in FIT/Gb and FIT/cm2 for several scaled SDRAM generations is presented revealing a power relationship. General models describing the soft error rates across scaled product generations are presented. The analysis methodology may be applied to other scaled microelectronic products and their key parameters.
Scaled CMOS technology reliability users guide
This work is sponsored by the NASA Electronic Parts and Packaging (NEPP) Program. One of the objectives of this task is to prepare a body of knowledge guideline document summarizing the CMOS technology scaling impact on CMOS parts and parts reliability for space applications. Scaling impact on parts radiation sensitivity is not addressed in this report.
Microelectronics reliability : physics-of-failure based modeling and lifetime evaluation
This handbook presents a physics-of-failure approach to microelectronics reliability modeling and assessment. Knowledge of the root cause and physical behavior of key failure mechanisms in microelectronic devices has improved dramatically over recent years and has led to the development of more sophisticated reliability modeling tools and techniques...
Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS
As microelectronics is scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of electromigration (EM), time-dependent-dielectric-breakdown (TDDB) and hot carrier degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s).
Frequency Dependence of Single-Event Upset in Highly Advanced PowerPC Microprocessors
Single-event upset effects from heavy ions were measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes at three frequencies of 500, 1066 and 1600 MHz. Frequency dependence of single-event upsets is discussed. The results of our studies suggest the single-event upset in registers and D-Cache tend to increase with frequency. This might have important implications for the overall single-event upset trend as technology moves toward higher frequencies.
Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM
As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.
Impact of junction temperature on microelectronic device reliability and considerations for space applications
This paper provides a summary of an industry survey on junction temperature derating from key microelectronics suppliers, and offers recommendations to users for temperature derating for reliable operation over time. Background information on established derating factors, and reccommendations for safe operating junction temperatures for newer technologies are also presented.