Engineering topics
Wu, Quansheng
Publications and source records attributed to Wu, Quansheng.
Gate-Tunable Multiband Transport in ZrTe 5 Thin Devices
Interest in ZrTe 5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors remains controversial: for example, the characteristic peak in the temperature-dependent resistivity and the anomalous Hall effect. Here, through employing a clean dry-transfer fabrication method in an inert environment, we successfully obtain high-quality ZrTe 5 thin devices that exhibit clear dual-gate tunability and ambipolar field effects. Such devices allow us to systematically study the resistance peak as well as the Hall effect at various doping densities and temperatures, revealing the contribution from electron–hole asymmetry and multiple-carrier transport. By comparing with theoretical calculations, we suggest a simplified semiclassical two-band model to explain the experimental observations. Finally, our work helps to resolve the longstanding puzzles on ZrTe 5 and could potentially pave the way for realizing novel topological states in the two-dimensional limit.
Reply to: Low-frequency quantum oscillations in LaRhIn 5 : Dirac point or nodal line?
We thank G.P. Mikitik and Yu.V. Sharlai for contributing this note and the cordial exchange about it. First and foremost, we note that the aim of our paper is to report a methodology to diagnose topological (semi)metals using magnetic quantum oscillations. Thus far, such diagnosis has been based on the phase offset of quantum oscillations, which is extracted from a “Landau fan plot”. A thorough analysis of the Onsager–Lifshitz–Roth quantization rules has shown that the famous π-phase shift can equally well arise from orbital or spin magnetic moments in topologically trivial systems with strong spin-orbit coupling or small effective masses. Therefore, the “Landau fan plot” does not by itself constitute a proof of a topologically nontrivial Fermi surface. In the paper at hand, we report an improved analysis method that exploits the strong energy dependence of the effective mass in linearly dispersing bands. This leads to a characteristic temperature dependence of the oscillation frequency which is a strong indicator of nontrivial topology, even for multi-band metals with complex Fermi surfaces. Three materials, Cd 3 As 2 , Bi 2 O 2 Se and LaRhIn5 served as test cases for this method. Linear band dispersions were detected for Cd 3 As 2 , as well as the F ≈ 7 T pocket in LaRhIn 5 .
Temperature dependence of quantum oscillations from non-parabolic dispersions
The phase offset of quantum oscillations is commonly used to experimentally diagnose topologically nontrivial Fermi surfaces. This methodology, however, is inconclusive for spin-orbit-coupled metals where π -phase-shifts can also arise from non-topological origins. Here, we show that the linear dispersion in topological metals leads to a T 2 -temperature correction to the oscillation frequency that is absent for parabolic dispersions. We confirm this effect experimentally in the Dirac semi-metal Cd 3 As 2 and the multiband Dirac metal LaRhIn 5 . Both materials match a tuning-parameter-free theoretical prediction, emphasizing their unified origin. For topologically trivial Bi 2 O 2 Se, no frequency shift associated to linear bands is observed as expected. However, the π -phase shift in Bi 2 O 2 Se would lead to a false positive in a Landau-fan plot analysis. Our frequency-focused methodology does not require any input from ab-initio calculations, and hence is promising for identifying correlated topological materials.