Engineering topics

Yariv, A.

Publications and source records attributed to Yariv, A..

At least 19 records

NASA NTRS1988

Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al, Ga) As lasers

Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.

Derry, P. L.↗

NASA NTRS1986

Confocal unstable-resonator semiconductor laser

GaAs/GaAlAs heterostructure lasers with a monolithic confocal unstable resonator were demonstrated. The curved mirrors satisfying the confocal condition were fabricated by etching. Close to threshold, the lasers operate in a single lateral mode with a nearly collimated output beam. A single-lobe far-field intensity distribution as narrow as 1.9-deg full width at half maximum was measured.

Salzman, J.↗

NASA NTRS1986

Lateral coherence properties of broad-area semiconductor quantum well lasers

The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution.

Larsson, A.↗

NASA NTRS1986

Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity monolithic loss modulator

Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity electroabsorption monolithic loss modulator is demonstrated. In this device, an efficient loss modulation is achieved through the quantum confined Stark effect in a modulator section and the enhanced carrier induced band shrinkage effect in an optical amplifier section. It is found that a picosecond pulse as narrow as 18.6 ps full width at half-maximum is generated and a high repetition rate of more than 3 GHz is obtained.

Arakawa, Y.↗

NASA NTRS1986

Improved Waveguide Laser Array

Improved structure for integrated array of AlxGa1-xAs diode lasers causes array to oscillate predominantly in fundamental supermode (with all units at same phase), thereby producing intense, narrow light beam. New structure differs from older ones in that gain in spaces between laser channels is approximately equal to gain in channels.

Mukai, S.↗

NASA NTRS1986

High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy

Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79 percent and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8 deg (1.9 times diffraction limit) for a 100 micron-wide laser were obtained under pulsed conditions.

Larsson, A.↗

NASA NTRS1985

Spectral and temporal characteristics of AlGaAs/GaAs superlattice p-i-n photodetectors

Measurements of the spectral and the temporal response of AlGaAs/GaAs p-i-n photodetectors with superlattice intrinsic regions grown by molecular beam epitaxy are reported. The feasibility for high-speed applications is demonstrated by a time constant limited impulse response of 200 ps (full width at half-maximum) when excited near the band edge with 100 ps optical pulses. The theory-predicted and recently verified voltage tunability of the band edge with clearly resolved excitonic resonances was observed. The responsivity was measured to be 0.2 A/W.

Larsson, A.↗

NASA NTRS1985

Damping Relaxation Oscillations in Laser Diodes

Proposed semiconductor laser modulated at frequencies up to near its resonant frequency more efficiently than older devices. New laser uses two different effective carrier lifetimes: one for dc and lowfrequency operation and another for operation near resonant frequency. Laser part of bipolar transistor with capacitor that serves as ac short circuit.

Katz, J.↗

NASA NTRS1985

Arrangement for damping the resonance in a laser diode

An arrangement for damping the resonance in a laser diode is described. This arrangement includes an additional layer which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency which is far below the resonance frequency the capacitor impedance is very low, effectively shorting the base to the collector.

Katz, J.↗

NASA NTRS1985

Separate-contact phase-locked semiconductor laser arrays

The novel optoelectronic devices discussed, phase-locked semiconductor laser arrays with separate contacts can perform a variety of near field and far field pattern tailoring functions and control mutual coherence among array elements, as well as lasing wavelength selectivity and tunability. Attention is presently given to experimental results from such arrays, which indicate that the threshold currents of the 4-micron wide lasers employed are typically 60 mA. The separate contacts to each one of them are provided by means of two-level metallization.

Katz, J.↗

NASA NTRS1984

Fundamental mode oscillation of a buried ridge waveguide laser array

An eight-element phase-locked array of index-guided separate confinement ridge AlGaAs diode lasers is fabricated. In this array the absorption of light in the region between lasers is negligible and the gain profile across the array is nearly uniform. Unlike most other arrays, this array oscillates in its fundamental mode. Stable radiation patterns of near diffraction-limited single narrow beam with 1.6 deg width are obtained. The beam width approaches the theoretical limit for the present array structure.

Mukai, S.↗

NASA NTRS1984

Single contact tailored gain phased array of semiconductor lasers

A single contact tailored gain-guided array is demonstrated in which the gain profile across the array is made strongly asymmetric by varying the width of the contact stripes. A proton isolated arary of six (GaAl)As lasers with 5-micron separations and widths varying linearly between 3 and 8 microns had a single lobed far field 2 deg wide, close to the diffraction limit for a single supermode. Fabrication of this device is simple, and suited to large-scale processing techniques. It is also shown that in such an asymmetric gain-guided array the fundamental mode is favored over higher order modes, and that higher order modes can have single lobed far-field patterns differing only slightly from that of the fundamental.

Lindsey, C. P.↗

NASA NTRS1984

Controlled fundamental supermode operation of phase-locked arrays of gain-guided diode lasers

Uniform semiconductor laser arrays tend to oscillate in a superposition of their supermodes, thus leading to large beam divergence and spectral spread. Discrimination among the supermodes in phase-locked arrays is discussed theoretically. It is shown that supermode discrimination in gain-guided arrays, in favor of the fundamental supermode, is made possible by the near-field interference patterns which result from the complex optical fields of the gain-guided lasers. A fundamental supermode operation is demonstrated, for the first time, in GaAlAs/GaAs gain-guided laser arrays. This is achieved by control of the current (gain) profile across the array by means of individual laser contacts.

Kapon, E.↗

NASA NTRS1984

Monolithically integrated array of GaAlAs electroabsorption modulators

The operation of an eight-element monolithic array of GaAlAs electroabsorption modulators has been demonstrated. The single-mode waveguide modulators are implemented in a reverse-biased p-pi-n heterojunction configuration, with center-to-center spacing of 9 microns between adjacent channels. This device may be useful for intensity modulation in high (spatial) resolution applications.

Robinson, D. L.↗

NASA NTRS1984

Chirped arrays of diode lasers for supermode control

Nonuniform structures of phase-locked diode lasers, which make it possible to discriminate efficiently against all the higher order array supermodes (lateral modes) are proposed. In these nonuniform arrays, the effective mode index in each channel varies across the array. Consequently, the envelopes of the various supermodes, including the highest order one, differ significantly from each other. Thus, by proper tailoring of the gain distribution across the array, one can conveniently select the fundamental supermode. Such fundamental supermode oscillation is essential in order to obtain single lobe, diffraction limited beams and minimal spectal spread from phase-locked laser arrays.

Kapon, E.↗

NASA NTRS1984

Rate equations analysis of phase-locked semiconductor laser arrays under steady state conditions

Rate equations analysis of phase-locked semiconductor laser arrays has been carried out. It was found that for given (laser) current densities, the photon density distribution in the array elements is that particular one which maximizes the total photon density. The results of this analysis were then combined with the waveguide properties of the laser array waveguide, yielding a basic model of phase-locked diode laser arrays. This model explains the effects of the variation of the current combination through the array elements on its mode structure that were observed recently.

Katz, J.↗

NASA NTRS1984

Coupling coefficient of gain-guided lasers

An analytical model is presented for the coupling coefficient for two gain-guided coupled waveguides, e.g., semiconductor laser arrays. A common parabolic gain distribution is assumed for the lasers, and the effective dielectric constant distribution is approximated in terms of the bulk refraction index, wavelength, power filling factor, and the antiguiding factor. The fundamental mode is then formulated and used in an integral for the coupling coefficient. The dependence of the coefficient of various waveguide parameters is described.

Katz, J.↗

NASA NTRS1984

Supermode analysis of phase-locked arrays of semiconductor lasers

The optical characteristics of phase-locked semiconductor laser arrays are formulated in terms of the array supermodes, which are the eigenmodes of the composite-array waveguide, by using coupled-mode theory. These supermodes are employed to calculate the near fields, the far fields, and the difference in the longitudinal-mode oscillation wavelengths of the array. It is shown that the broadening in the far-field beam divergence, as well as the broadening of each of the longitudinal modes that were observed in phase-locked arrays, may arise from the excitation of an increasing number of supermodes at increasing pumping levels.

Kapon, E.↗