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NASA NTRS · 19850036307

Monolithically integrated array of GaAlAs electroabsorption modulators

Abstract

The operation of an eight-element monolithic array of GaAlAs electroabsorption modulators has been demonstrated. The single-mode waveguide modulators are implemented in a reverse-biased p-pi-n heterojunction configuration, with center-to-center spacing of 9 microns between adjacent channels. This device may be useful for intensity modulation in high (spatial) resolution applications.

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BibTeXRIS

Robinson, D. L., Marshall, W. K., Katz, J., Smith, J. S., Yariv, A.. 1984-08-16. Monolithically integrated array of GaAlAs electroabsorption modulators. https://ntrs.nasa.gov/citations/19850036307

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