Engineering topics

Young, Matthew

Publications and source records attributed to Young, Matthew.

7 records

DOE OSTI2023

Ribbons Affect Movement of Cracked Solar Cells [Poster]

Cracking of crystalline silicon photovoltaic cells remains a challenging topic in accurately assessing the long-term reliability and performance of affected modules. Cells can be damaged in every stage throughout the lifetime of a photovoltaic module, ranging from manufacturing, transportation, and installation to operation. Initially, the metallization can be able to bridge the gap of fractured cells and keep individual cell fragments electrically connected. However, photovoltaic modules and cells experience thermo-mechanical stresses during operation from temperature changes and pressure cycles of wind and snow loads. This causes the cell fragments to move, which, in turn, can lead to the wear out of the metallization and, consequently, to power loss or a safety hazard. The rate at which this degradation mechanism proceeds is currently unknown. Hence, in this work, we quantify the cell fragment movement of polycrystalline and monocrystalline mini-modules. By using digital image correlation, we were able to extract the normal crack opening and tangential sliding distances of adjacent cell fragments during heating of the mini-modules. Those distances are essential to develop wear-out models for the metallization and determine the rate of the degradation mechanism. We found that the interconnect technology has a significant impact on the direction and quantity of the cell fragment movements.

14 SOLAR ENERGY↗

DOE OSTI2021

Investigation of Gallium–Boron Spin-On Codoping for poly-Si/SiO x Passivating Contacts

A doping technique for p-type poly-Si/SiOx passivating contacts using a spin-on method for different mixtures of Ga and B glass solutions is presented. Effects of solution mixing ratios on the contact performance (implied open circuit voltage iV oc , contact resistivity ..rho..c) are investigated. For all as-annealed samples at different drive-in temperatures, increasing the percentage of Ga in the solution shows a decrement in iV oc (from ~680 to ~610 mV) and increment in ..rho..c (from ~3 to ~800 mO cm 2 ). After a hydrogenation treatment by depositing a SiN x /AlO x stack followed by forming gas annealing, all samples show improved iVoc (~700 mV with Ga-B co-doped, and ~720 mV with all Ga). Interestingly, when co-doping Ga with B, even a small amount of B in the mixing solution shows negative effects on the surface passivation. Active and total dopant profiles obtained by electrical capacitance voltage and secondary-ion mass spectrometry measurements, respectively, reveal a relatively low percentage of electrically-active Ga and B in the poly-Si and Si layers. Overall, these results help understand the different features of the two dopants: a low ρ c with B, a good passivation with Ga, their degree of activation inside the poly-Si and Si layers, and the annealing effects.

14 SOLAR ENERGY↗

DOE OSTI2021

Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE

GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm 2 in a GaInP/GaAs cell, an improvement of 0.9 mA/cm2 over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%.

42 ENGINEERING↗

DOE OSTI2021

GaAs Solar Cells Grown on Intentionally-Contaminated GaAs Substrates

III-V solar cells have the best performance of any semiconductor materials, but deposition of these materials relies on high-quality single crystal GaAs wafers for their superior performance. Unfortunately, the cost of these wafers makes these high-efficiency devices only accessible in high-value or niche markets. Here, we explored the effect of growing bulk GaAs crystals with lower purity input materials in order to reduce their cost. We observe that intentional impurities added to the melt before the crystal growth occurs segregate to the top of the boule. Single junction GaAs solar cells grown on wafers made from contaminated boules showed no performance degradation compared to a high-purity control wafer. These results suggest that lower purity Ga and As source materials can be used during crystal growth to reduce the cost of wafers.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2020

High Efficiency Silicon Module Degradation - From Atoms to Systems: Preprint

For PV to be cost competitive with traditional energy sources reliability is of critical importance. Historically, PV reliability has focused on the module packaging because degradation and failure modes were directly linked to the packaging. Today, in addition to module packaging cell related reliability issues can be observed. We show that silicon heterojunction (SHJ) degradation is directly linked to the re-distribution of hydrogen (H) near the interface between the amorphous-silicon (a-Si) and silicon bulk. PERC modules show a similar decline in carrier lifetime indicating that not the packaging but the cells are also changing during field exposure. Examination of a stressed PERC cell showed a similar H redistribution in the cell. Understanding the degradation mechanism at the atomic level is important in facilitating possible mitigating mechanisms and more accurately projecting performance.

degradation↗

DOE OSTI2020

GaAs solar cells grown on intentionally contaminated GaAs substrates

III-V materials such as GaAs and GaInP have some of the best electronic and optical properties of any semiconductor materials, but deposition of these materials relies on high-quality single crystal GaAs substrates for their superior performance. Unfortunately, the cost of these substrates makes these high-efficiency devices only accessible in high-value or niche markets. In this study, we explore the effect of growing bulk GaAs crystals with lower purity input materials in order to reduce their cost. We observe that intentional impurities added to the melt before the crystal growth occurs segregate to the top of the boule. Single junction GaAs solar cells grown on substrates made from contaminated boules showed no performance degradation compared to a high-purity control substrate. These results suggest that lower purity Ga and As source materials can be used during crystal growth to reduce the cost of substrates.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Assessment of peak power demand reduction available via modulation of building ventilation systems.

Peak power demand strains electrical grids and increases cost of electricity generation, transmission and distribution infrastructure. Many studies have examined ways of reducing peak power demand, including modification of room air temperature setpoints or reduction of lighting levels. However, very few or no studies have examined the peak power reduction resource offered by temporary curtailment of building ventilation systems. For this reason, we conducted a simulation campaign in which we examined the resource offered by temporary ventilation curtailment in commercial buildings of different use types across the United States and in residences in the state of California, with the essential constraint that any changes resulted in air quality acceptable to occupants through additional ventilation to compensate for the curtailment. To do this, we employed previously validated building models implemented in the airflow and contaminant transport tool CONTAM and building thermal and systems modeling tool EnergyPlus, in some cases co-simulated. Overall, results show savings are highly dependent on building type and climate but range from 0–2 W/ft 2 and up to 40% of total peak building power demand. Depending on building type, this power shed can be conducted for 1.5–8 h before acute exposure or odor concerns are expected, assuming a safety factor of 2. This reduction is of the same magnitude as that offered by thermal control strategies such as setpoint increase, or from lighting reduction strategies.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗