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Engineering topics

Zhang, Zheyu

Publications and source records attributed to Zhang, Zheyu.

Engineering a photoenzyme to use red light

Photoenzymatic reactions involving flavin-dependent “ene”-reductases (EREDs) rely on protein-templated charge transfer (CT) complexes between the cofactor and substrate for radical initiation. These complexes typically absorb in the blue region of the electromagnetic spectrum. Here, we engineered an ERED to form CT complexes that absorb red light. Mechanistic studies indicate that red-light activity is due to the growth of a red-absorbing shoulder off the previously identified cyan absorption feature. Molecular dynamics simulations, docking, and excited-state calculations suggest that the cyan feature involves a π→π* transition on flavin, whereas the red-light absorption is a π→π* transition between flavin and the substrate. Furthermore, differences in the electronic transition are due to changes in the substrate-binding conformation and allosteric tuning of the electronic structure of the cofactor-substrate complex. Microenvironment tuning of the CT complex for red-light activity is observed with other engineered photoenzymatic reactions, highlighting this effect’s generality.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Integrated Large-Scale Data Management Platform for Photovoltaic Power Conversion Equipment (PCE) Reliability Data

To meet the demand for accuracy and real-time capability of PV system degradation evaluation, massive volume data is needed to run high-fidelity and high-efficiency simulations and perform advanced data analysis. However, PV farm operators have a series of difficulties with PV inverter data, such as data collection from multiple channels, massive data storage, data management and massive data analysis. To address these challenges, we developed an integrated data management platform capable of data acquisition, processing, storage, query, and performing big data analysis utilizing AI algorithms. The platform can also achieve data correctness verification and provide an effective distributed data management solution to retrieve massive data and establish a connection to distributed computational frameworks.

data management platform↗

Integrated Large-Scale Data Management Platform for Photovoltaic Power Conversion Equipment (PCE) Reliability Data: Preprint

To meet the demand for accuracy and real-time capability of PV system degradation evaluation, massive volume data is needed to run high-fidelity and high-efficiency simulations and perform advanced data analysis. However, PV farm operators have a series of difficulties with PV inverter data, such as data collection from multiple channels, massive data storage, data management and massive data analysis. To address these challenges, we developed an integrated data management platform capable of data acquisition, processing, storage, query, and performing big data analysis utilizing AI algorithms. The platform can also achieve data correctness verification and provide an effective distributed data management solution to retrieve massive data and establish a connection to distributed computational frameworks.

data management↗

Accelerating Simulation for High-Fidelity PV Inverter System Reliability Assessment with High-Performance Computing

The overall cost of photovoltaic (PV) systems has shown a downward trend during the last decade; however, PV inverter failures account for the highest cost of operation and maintenance. To address this, reliability tools with powerful computation and better accuracy are required for the lifetime prediction and degradation evaluation of PV inverters. This paper proposes an event-driven parallel computing-based simulator. The proposed simulator applies high-performance computing techniques and other accessory optimization techniques-including cluster merging, adaptive model updates, and steady-state identification-to make reliability assessments for PV inverters under given input mission profiles and operating conditions with high efficiency and high fidelity. The main idea of the simulator and its workflow are introduced. Then, a demo PV inverter system simulator is implemented, and the speedup of the total simulations of the switching model reaches 123.03 times.

high-performance computing↗

Evaluation of polymorphism and charge transport in a BaO–CaO–Ta 2 O 5 perovskite phase diagram using TOF-neutron and synchrotron X-ray diffraction, the bond-valence method and impedance spectroscopy

In the present work, we develop a comprehensive functional phase diagram for the Ba–Ca–Ta–O quaternary system Ba 3 Ca 1+ x Ta 2− x O 9−3 x /2 (0 ≤ x ≤ 0.36) between 1000 and 1550 °C, coupled with theoretical calculations of the cationic ordering in supercells.

Singh, Kalpana↗

Metal Oxide Varistor (MOV) Lifetime Estimation with Impulse-Based Testing in PV Inverter Systems

Surges caused by lightning strikes could damage electrical components in photovoltaic (PV) systems. Metal oxide varistors (MOVs) are commonly used to protect PV systems from lightning strikes. This paper proposes a holistic impulse-based MOV lifetime estimation framework. The impacts of peak current and fault duration induced by lightning events are considered in the MOV lifetime estimation framework. Moreover, the impact of different parameter combinations on MOV lifetime estimation is analyzed. The effectiveness of the proposed work is validated in a PV inverter test system developed in MATLAB/Simulink.

lifetime estimation↗

Design and Implementation of Automated Characterization of T-type based Power Module for PV Inverter Reliability Assessment

Reliability of power electronics holds the key for future power and energy systems since it is essential for system integration with renewables and energy storage systems. Variation of power module characteristics over the converter’s operational lifetime is a critical indicator to assess its reliability. Device characterization consists of different steps to collect, process, and visualize results, which is usually time-consuming, especially for power modules based on a non-phase-leg configuration, such as T-type circuits, widely applied for PV inverters. To reduce the time, ensure repeatability, and guarantee consistency, an automated test bench can be helpful. This paper focuses on a T-type-based power module and proposes a unique characterization platform and corresponding automation procedure and implementation. Considering the major characterization difference between T-type power modules over the conventional phase-leg power module, first, the special consideration for static characterization is highlighted. Second, the unique dynamic characterization design associated with the T-type power module is described. Finally, the automation of the power module characterization and the test platform is presented along with results and special considerations.

Siraj, Ahmed↗

Metal Oxide Varistor (MOV) Lifetime Estimation with Impulse-Based Testing in PV Inverter Systems: Preprint

Surges caused by lightning strikes could damage electrical components in photovoltaic (PV) systems. Metal oxide varistors (MOVs) are commonly used to protect PV systems from lightning strikes. In this paper, a holistic impulse-based MOV lifetime estimation framework is proposed. The impacts of peak current and fault duration induced by lightning events are considered in the MOV lifetime estimation framework. Moreover, the impact of different parameter combinations on MOV lifetime estimation is analyzed. The effectiveness of the proposed work is validated in a PV inverter test system developed in MATLAB/Simulink.

lifetime estimation↗

Failure Mode and Effects Analysis for a Photovoltaic Inverter

While PV panel reliability continues to increase, PV inverters become the limiting factor for PV system reliability. Consequently, it is critical to have a generic tool from a third party for PV inverter reliability assessment to help 1) utilities/PV farm operators schedule maintenance in advance, and 2) inverter developers improve the next-generation design. However, these two things cannot be accomplished without first understanding the reasons behind inverter failure. Following this idea, as the first step, it is essential to identify and investigate the most failure-prone components within a PV inverter system. After all, any system is only as reliable as the components that are contained within it. This motivates the failure mode and effects analysis (FMEA) work presented for this workshop. The FMEA is conducted as follows: first, the overview of the methodology on the development of the FMEA is presented; then, based on a top-down approach starting from the PV inverter system, critical inverter components with high failure rates are identified and summarized; afterward, a thorough FMEA study at a component-level is performed and its results, including failure modes, failure mechanisms, and critical stressors, are tabulated; finally, according to three rankings (chance of occurrence, severity of occurrence, and ease of detection prior to failure) for each failure mechanism provided by the FMEA, risk priority numbers are calculated and the failure mechanisms along with the critical stressors are ranked in terms of their potentially detrimental effect on the PV inverter.

Brown, Buck↗

High-Bandwidth Low-Inductance Current Shunt for Wide-Bandgap Devices Dynamic Characterization

High bandwidth sensors are required to measure the wide-bandgap devices' transient behavior because of their fast switching speed. In addition to high bandwidth, the current sensor must introduce little extra parasitic inductance to the switching power loop. The analysis of conventional shunt resistors shows the key to high bandwidth is the coaxial structure and its parasitic inductance is proportional to its transient heat energy rating. Additionally, by combining the structure of coaxial shunt resistor and alumina substrate surface mount thin film resistors, a novel surface mount coaxial shunt resistor is introduced. Experimental measurement verifies its capability of achieving very high bandwidth while introducing very low parasitic inductance. The design can achieve up to 2.23-GHz measurement bandwidth while keeping its parasitic inductance as low as 0.12 nH. Application in gallium nitride heterojunction-field-effect-transistors double pulse test shows it can faithfully capture the transient current waveform while introducing little interference to the switching behavior.

42 ENGINEERING↗

Methodology of Low Inductance Busbar Design for Three-Level Converters

Three-level (3L) converters are more susceptible to parasitics compared with two-level converters because of their complicated structure with multiple switching loops. In this article, the methodology of busbar layout design for 3L converters based on the magnetic cancellation effect is presented. The methodology can fit for 3L converters with symmetric and asymmetric configurations. A detailed design example is provided for a high-power 3L-active neutral point clamped (ANPC) converter, which includes the module selection, busbar layout, and dc-link capacitor placement. The loop inductance of the busbar is verified with simulation, impedance measurements, and converter experiments. Furthermore, the results match with each other, and the inductances of short and long loops are 6.5 and 17.5 nH, respectively, which are significantly lower than the busbars of NPC-type converters in other references.

42 ENGINEERING↗

Design of Low Inductance Busbar for 500 kVA Three-Level ANPC Converter

The adoption of SiC devices in high power applications enables higher switching speed, which requires lower circuit parasitic inductance to reduce the voltage overshoot. This paper presents the design of a busbar for a 500 kVA three-level active natural clamped converter. The layout of the busbar is discussed in detail based on the analysis of the multiple commutation loops, magnetic cancelling effect, and DC-link capacitor placement. The loop inductance of the designed busbar is verified with simulation, impedance measurements and converter experiment. The results can match with each other and the inductances of small and large loop are 6.5 nH and 17.5 nH respectively, which is significantly lower than the busbars of NPC type converters in other references.

SiC MOSFET↗