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DOE OSTI · 1777708

High-Bandwidth Low-Inductance Current Shunt for Wide-Bandgap Devices Dynamic Characterization

Zhang, Wen·Zhang, Zheyu·Wang, Fred·Brush, Edward V.·Forcier, Neil
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Abstract

High bandwidth sensors are required to measure the wide-bandgap devices' transient behavior because of their fast switching speed. In addition to high bandwidth, the current sensor must introduce little extra parasitic inductance to the switching power loop. The analysis of conventional shunt resistors shows the key to high bandwidth is the coaxial structure and its parasitic inductance is proportional to its transient heat energy rating. Additionally, by combining the structure of coaxial shunt resistor and alumina substrate surface mount thin film resistors, a novel surface mount coaxial shunt resistor is introduced. Experimental measurement verifies its capability of achieving very high bandwidth while introducing very low parasitic inductance. The design can achieve up to 2.23-GHz measurement bandwidth while keeping its parasitic inductance as low as 0.12 nH. Application in gallium nitride heterojunction-field-effect-transistors double pulse test shows it can faithfully capture the transient current waveform while introducing little interference to the switching behavior.

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42 ENGINEERINGbandwidthcurrent measurementcurrent sensordouble pulse testinductancemeasurement bandwidthnetwork analyzerparasitic inductanceresistorssensorsswitchestransient analysiswide-bandgap devices

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Zhang, Wen, Zhang, Zheyu, Wang, Fred, Brush, Edward V., Forcier, Neil. 2020-09-23. High-Bandwidth Low-Inductance Current Shunt for Wide-Bandgap Devices Dynamic Characterization. https://doi.org/10.1109/tpel.2020.3026262

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