Engineering topics

Zorman, Christian A.

Publications and source records attributed to Zorman, Christian A..

12 records

NASA NTRS2016

Packaged Capacitive Pressure Sensor System for Aircraft Engine Health Monitoring

This paper describes the development of a packaged silicon carbide (SiC) based MEMS pressure sensor system designed specifically for a conventional turbofan engine. The electronic circuit is based on a Clapp-type oscillator that incorporates a 6H-SiC MESFET, a SiCN MEMS capacitive pressure sensor, titanate MIM capacitors, wirewound inductors, and thick film resistors. The pressure sensor serves as the capacitor in the LC tank circuit, thereby linking pressure to the resonant frequency of the oscillator. The oscillator and DC bias circuitry were fabricated on an alumina substrate and secured inside a metal housing. The packaged sensing system reliably operates at 0 to 350 psi and 25 to 540C. The system has a pressure sensitivity of 6.8 x 10E-2 MHzpsi. The packaged system shows negligible difference in frequency response between 25 and 400C. The fully packaged sensor passed standard benchtop acceptance tests and was evaluated on a flight-worthy engine.

Harsh environment↗

NASA NTRS2016

Demonstration of a Packaged Capacitive Pressure Sensor System Suitable for Jet Turbofan Engine Health Monitoring

In this paper, the development and characterization of a packaged pressure sensor system suitable for jet engine health monitoring is demonstrated. The sensing system operates from 97 to 117 MHz over a pressure range from 0 to 350 psi and a temperature range from 25 to 500 deg. The sensing system consists of a Clapp-type oscillator that is fabricated on an alumina substrate and is comprised of a Cree SiC MESFET, MIM capacitors, a wire-wound inductor, chip resistors and a SiCN capacitive pressure sensor. The pressure sensor is located in the LC tank circuit of the oscillator so that a change in pressure causes a change in capacitance, thus changing the resonant frequency of the sensing system. The chip resistors, wire-wound inductors and MIM capacitors have all been characterized at temperature and operational frequency, and perform with less than 5% variance in electrical performance. The measured capacitive pressure sensing system agrees very well with simulated results. The packaged pressure sensing system is specifically designed to measure the pressure on a jet turbofan engine. The packaged system can be installed by way of borescope plug adaptor fitted to a borescope port exposed to the gas path of a turbofan engine.

Harsh environment↗

NASA NTRS2014

Wireless Capacitive Pressure Sensor Operating up to 400 Celcius from 0 to 100 psi Utilizing Power Scavenging

In this paper, a wireless capacitive pressure sensor developed for the health monitoring of aircraft engines has been demonstrated. The sensing system is composed of a Clapp-type oscillator that operates at 131 MHz. The Clapp oscillator is fabricated on a alumina substrate and consists of a Cree SiC (silicon carbide) MESFET (Metal Semiconductor Field Effect Transistors), this film inductor, Compex chip capacitors and Sporian Microsystem capacitive pressure sensor. The resonant tank circuit within the oscillator is made up of the pressure sensor and a spiral thin film inductor, which is used to magnetically couple the wireless pressure sensor signal to a coil antenna placed over 1 meter away. 75% of the power used to bias the sensing system is generated from thermoelectric power modules. The wireless pressure sensor is operational at room temperature through 400 C from 0 to 100 psi and exhibits a frequency shift of over 600 kHz.

Scardelletti, Maximilian C.↗

NASA NTRS2012

Composition Comprising Silicon Carbide

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

Mehregany, Mehran↗

NASA NTRS2011

Silicon carbide and other films and method of deposition

Mehregany, Mehran↗

NASA NTRS2011

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Scardelletti, Maximilian C.↗

NASA NTRS2010

PVD Silicon Carbide as a Thin Film Packaging Technology for Antennas on LCP Substrates for Harsh Environments

This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.

Scardelletti, Maximilian C.↗

NASA NTRS2008

RF MEMS Switches with SiC Microbridges for Improved Reliability

Radio frequency (RF) microelectromechanical (MEMS) switches offer superior performance when compared to the traditional semiconductor devices such as PIN diodes or GaAs transistors. MEMS switches have a return loss (RL) better than -25 dB, negligible insertion loss (IL), isolation better than -30 dB, and near zero power consumption. However, RF MEMS switches have several drawbacks the most serious being long-term reliability. The ability for the switch to operate for millions or even billions of cycles is a major concern and must be addressed. MEMS switches are basically grouped in two categories, capacitive and metal-to-metal contact. The capacitive type switch consists of a movable metal bridge spanning a fixed electrode and separated by a narrow air gap and thin insulating material. The metal-to-metal contact type utilizes the same basic design but without the insulating material. After prolonged operation the metal bridges, in most of these switches, begin to sag and eventually fail to actuate. For the metal-to-metal type, the two metal layers may actually fuse together. Also if the switches are not packaged properly or protected from the environment moisture may build up and cause stiction between the top and bottom electrodes rendering them useless. Many MEMS switch designs have been developed and most illustrate fairly good RF characteristics. Nevertheless very few have demonstrated both great RF performance and ability to perform millions/billions of switching cycles. Of these, nearly all are of metal-to-metal type so as the frequency increases RF performance decreases.

Scardelletti, Maximilian C.↗

NASA NTRS2007

Silicon carbide and other films and method of deposition

Mehregany, Mehran↗

NASA NTRS2007

Electrically Small Folded Slot Antenna Utilizing Capacitive Loaded Slot Lines

This paper presents an electrically small, coplanar waveguide fed, folded slot antenna that uses capacitive loading. Several antennas are fabricated with and without capacitive loading to demonstrate the ability of this design approach to reduce the resonant frequency of the antenna, which is analogous to reducing the antenna size. The antennas are fabricated on Cu-clad Rogers Duriod(TM) 6006 with multilayer chip capacitors to load the antennas. Simulated and measured results show close agreement, thus, validating the approach. The electrically small antennas have a measured return loss greater than 15 dB and a gain of 5.4, 5.6, and 2.7 dBi at 4.3, 3.95, and 3.65 GHz, respectively.

Scardelletti, Maximilian C.↗

NASA NTRS1999

Modeling of SiC Lateral Resonant Devices Over a Broad Temperature Range

Finite-element analysis (FEA) modal results of 3C-SiC lateral resonant devices anchored to a Si substrate are presented as resonant frequency versus temperature. The suspended elements are etched from a 2 micron, 3C-SiC film grown at 1600 K on a 500 micron-thick, Si substrate. The analysis includes, temperature-dependent properties, shape change due to volume expansion with temperature, and thermal stress caused by differential thermal expansion of different materials. Two designs are considered: type I has anchor locations close to the geometric centroid and a small shuttle; type 11 has a large shuttle with anchors far from the centroid, The resonant frequency decreases approximately 3.5% over a 1000 K temperature increase for the type-I device, and behaves according to theory. The resonant frequency of the type-11 device decreases by 2% over the first 400 K, then rises slightly over the remaining 600 K. This device deviates from theory because of the high thermal stress induced in the beams. The thermal stress is caused by the differential thermal expansion of the suspended element relative to the substrate. The results show that the device geometry must be properly chosen if the resonant frequency of that device will be used to calculate the temperature coefficient of Young's modulus. These results apply only to resonators of one material on a substrate of a different material.

DeAnna, Russell G.↗

NASA NTRS1998

Design, Operation, and Modeling of a Vertical APCVD Reactor for Silicon Carbide Film Growth

An atmospheric pressure chemical vapor deposition (APCVD) reactor utilizing a unique vertical geometry which enables 3C-SiC films to be grown on two, 4-inch diameter Si wafers has been constructed. Contrary to expectations, 3C-SiC films grown in this reactor are thickest at the downstream end of the substrates. To better understand the reason for the thickness distribution on the wafers, an axisymmetric finite-element model of the gas flow in the reactor was constructed. The model uses the ANSYS53 Flowtran package and includes compressible and temperature-dependent fluid properties in laminar or turbulent flow. It does not include reaction chemistry or unsteady flow. The ANSYS53 results predict that the cool, inlet fluid falls through the inlet pipe and the warm, diffuser region like a jet. This jet impinges on top of the susceptor and gets diverted to the reactor side walls, where it flows to the bottom of the reactor, turns, and slowly rises along the face of the susceptor. This may explain why the SiC films are thickest at the downstream side of the wafers, as gas containing fresh reactants first passes over this region. Modeling results are presented for both one atmosphere and one half atmosphere reactor pressure.

DeAnna, Russell G.↗