NASA NTRS · 20120007606
Composition Comprising Silicon Carbide
Abstract
A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
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Mehregany, Mehran, Zorman, Christian A., Fu, Xiao-An, Dunning, Jeremy L.. 2012-04-10. Composition Comprising Silicon Carbide. https://ntrs.nasa.gov/citations/20120007606
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