Engineering topics

Zoutendyk, J.

Publications and source records attributed to Zoutendyk, J..

6 records

NASA NTRS1986

Theoretical values of various parameters in the Gummel-Poon model of a bipolar junction transistor

Various parameters in the Gummel-Poon model of a bipolar junction transistor are expressed in terms of the basic structure of a transistor. A consistent theoretical approach is used which facilitates an understanding of the foundations and limitations of the derived formulas. The results enable one to predict how changes in the geometry and composition of a transistor would affect performance.

Benumof, R.↗

NASA NTRS1985

Modeling "Soft" Errors in Bipolar Integrated Circuits

Mathematical models represent single-event upset in bipolar memory chips. Physics of single-event upset in integrated circuits discussed in theoretical paper. Pair of companion reports present mathematical models to predict critical charges for producing single-event upset in bipolar randomaccess memory (RAM) chips.

Zoutendyk, J.↗

NASA NTRS1984

Bipolar junction transistor models for circuit simulation of cosmic-ray-induced soft errors

This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.

Benumof, R.↗

NASA NTRS1983

The physics of a single-event upset in integrated circuits: A review and critique of analytical models for charge collection

When an energetic particle (kinetic energy 0.5 MeV) originating from a radioactive decay or a cosmic ray transverse the active regions of semiconductor devices used in integrated circuit (IC) chips, it leaves along its track a high density electron hole plasma. The subsequent decay of this plasma by drift and diffusion leads to charge collection at the electrodes large enough in most cases to engender a false reading, hence the name single-event upset (SEU). The problem of SEU's is particularly severe within the harsh environment of Jupiter's radiation belts and constitutes therefore a matter of concern for the Galileo mission. The physics of an SEU event is analyzed in some detail. Owing to the predominance of nonlinear space charge effects and the fact that positive (holes) and negative (electrons) charges must be treated on an equal footing, analytical models for the ionized-charge collection and their corresponding currents as a function of time prove to be inadequate even in the simplest case of uniformly doped, abrupt p-n junctions in a one-dimensional geometry. The necessity for full-fledged computer simulation of the pertinent equations governing the electron-hole plasma therefore becomes imperative.

Vonroos, O.↗

NASA NTRS1982

Diffusive-convective physical vapor transport of PbTe from a Te-rich solid source

Crystal growth of PbTe by physical vapor transport (sublimation) in a closed ampoule is governed by the vapor species in thermal equilibrium with the solid compound. Deviations from stoichiometry in the source material cause diffusion limitation of the transport rate, which can be modified by natural (gravity-driven) convection. Mass-transport experiments have been performed using Te-rich material wherein sublimation rates have been measured in order to study the effects of natural convection in diffusion-limited vapor transport. Linear velocities for both crystal growth and evaporation (back sublimation) have been measured for transport in the direction of gravity, horizontally, and opposite to gravity. The experimental results are discussed in terms of both the one-dimensional diffusive-advective model and current, more sophisticated theory which includes natural convection. There is some evidence that convection effects from radial temperature gradients and solutal density gradients have been observed.

Zoutendyk, J.↗

NASA NTRS1975

Evaluation of silicon ribbon material for solar cell fabrication

Optical microscopy, electron microscopy, and X-ray diffraction were utilized to characterize silicon ribbon structure. Complex twin formation was observed in nearly all ribbons examined. Twins formed in the 110-plane 112-line ribbon orientation appear stable, and this orientation may be preferable when the ribbon is utilized for solar cells. In addition to twinning, grain boundaries and other structural defects were observed in the ribbon material. Hall effect, resistivity, spreading resistance, surface photovoltage, and solar cell electrical/optical measurements were performed on ribbon samples and correlated with structural and ribbon growth characteristics. Only those ribbon samples with either single-crystal structure or with 'parallel' twin formations were capable of solar-cell performance approaching that of Czochralski material.

Leipold, M.↗