NASA NTRS · 19670000303
Process controls introduction of selected impurities into semiconductor wafers
Abstract
Modified three-step process controls the concentration of lithium diffused as a dopant into the base region of a diffused n-on-p silicon solar cell wafer. Part of the surface layer of the base region of the p-type silicon containing the diffused dopant is removed, prior to redistributing the remaining portion of the dopant into the bulk of the wafer.
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Bartholomay, W. C., Topfer, A. R.. 1967-08-01. Process controls introduction of selected impurities into semiconductor wafers. https://ntrs.nasa.gov/citations/19670000303
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