Search NASAโŒ• Search

NASA NTRS ยท 19700000196

Low power NAND gate

Abstract

Complementary p-n-p transistor, used as the load resistor in an integrated circuit, reduces the switching time and the steady state dc current, and allows for a lower supply voltage. Current limiting is achieved by a novel unity-gain transistor.

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Lin, H. C.. 1970-04-01. Low power NAND gate. https://ntrs.nasa.gov/citations/19700000196

Cite the original work for its findings. Save a collection to share your selection of sources.