NASA NTRS ยท 19700000196
Low power NAND gate
Abstract
Complementary p-n-p transistor, used as the load resistor in an integrated circuit, reduces the switching time and the steady state dc current, and allows for a lower supply voltage. Current limiting is achieved by a novel unity-gain transistor.
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Lin, H. C.. 1970-04-01. Low power NAND gate. https://ntrs.nasa.gov/citations/19700000196
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