NASA NTRS · 19710000348
A study of nitride devices for computer memory applications
Abstract
Metal-nitride-oxide-silicon /MNOS/ capacitors act like metal-nitride-silicon /MNS/ capacitors with extra interface where sheet of charge can be stored in slow states. Flatband voltage shifts over a wide range by adjusting store charge density.
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Raburn, W. D.. 1971-09-01. A study of nitride devices for computer memory applications. https://ntrs.nasa.gov/citations/19710000348
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