NASA NTRS · 19730000197
P-channel silicone gate FET
Abstract
Modified fabrication technique for P-channel MOSFET devices eliminates problems involving gate placement and gate overlap. Technique provides self-aligned gate, eliminating complexity of mask aligning. Devices produced by this process are considerably faster than conventional MOSFET's and process increases yield.
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Ostis, S., Woo, D. S.. 1973-06-01. P-channel silicone gate FET. https://ntrs.nasa.gov/citations/19730000197
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