NASA NTRS · 19730035652
Electron tunnelling into amorphous germanium and silicon.
Abstract
Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.
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Smith, C. W., Clark, A. H.. 1972-01-01. Electron tunnelling into amorphous germanium and silicon.. https://ntrs.nasa.gov/citations/19730035652
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