Engineering topics
Publications and source records attributed to Clark, A. H..
Measurement of low-field and high-field resistivity in amorphous Ge in both the planar and transverse directions on the same samples, whose thickness ranged from 0.4 to 4 microns. No anisotropy was found, suggesting that the voids recently described by Galeener (1971) may not play a significant role in these transport processes.
Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.
An enhanced residual conductivity which persists long after cessation of illumination has been observed in amorphous germanium at 77 K. The effect may be thermally quenched by heating to 120 K, returning the sample to its initial condition.