NASA NTRS · 19740000017
Improved epitaxial process for fabricating silicon carbide semiconductor devices
Abstract
Process of growing expitaxial silicon carbide (SiC) layers on SiC substrates so that epitaxial growth is perpendicular to c-axis by chemical vapor deposition process at temperatures of 1590 to 1660 K minimizes variations in stacking sequence and problems associated with high temperatures.
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Will, H. A., Powell, J. A.. 1974-06-01. Improved epitaxial process for fabricating silicon carbide semiconductor devices. https://ntrs.nasa.gov/citations/19740000017
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