NASA NTRS · 19740002580
Thick film silicon growth techniques
Abstract
The research which was directed toward finding an improved die material is reported. Wetting experiments were conducted with various materials to determine their compatibility with silicon. Work has also continued toward the development of quartz as a die material as new techniques have provided more optimistic results than observed in the past. As a result of the thermal modification previously described, improvements in growth stability have contributed to an increase in ribbon quality.
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Bates, H. E., Mlavsky, A. I., Jewett, D. N., White, V. E.. 1973-08-31. Thick film silicon growth techniques. https://ntrs.nasa.gov/citations/19740002580
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