Progress in Implementation of the Portable Remote Imaging Spectrometer (PRISM) Coastal Ocean Sensor
No abstract available
pushbroom imaging spectrometer↗
Engineering topics
White, V. E.
Publications and source records attributed to White, V. E..
Progress in implementation of the Portable Remote Imaging Spectrometer (PRISM) coastal ocean sensor.
PRISM is a pushbroom imaging spectrometer currently in its second year of development at the Jet Propulsion Laboratory, intended to address the needs of airborne coastal ocean science research. We give an overview of the instrument functionality and then describe progress in component and subsystem fabrication. In the second year, all critical components have been received and most have been integrated into their respective subsystems. The design of the vacuum enclosure has also been completed. We present results from the telescope and spectrometer sub-assemblies, the focal plane electronics, and the overall system assembly implementation.
Yee, K.↗
Thick film silicon growth techniques
One inch wide silicon ribbons up to 14 inches long have been produced from graphite dies. Several different techniques have been employed to improve the semiconductor purity of silicon. This has resulted in a general increase in quality although the techniques involved have not been optimized. The power factor of uncoated ribbon solar cells produced for material evaluation has increased to approximately 75% of those evaluation cells made from commercial silicon. The present limitation is believed due to low lifetime. Additional work has continued with new die materials; however, only composite dies of SiO2 and C show significant potential at this time.
Bates, H. E.↗
Growth of silicon ribbon by edge-defined, film-fed growth
Recent advances in the application of the edge-defined, film-fed growth (EFG) method to silicon ribbon are described. Ribbons up to 2 x 40 cm and 1 x 70 cm in width and length, respectively, have been grown at rates of 1 to 2.5 cm/min. The electrical properties of typical undoped ribbons are resistivity of 0.5 to 5 ohm-cm p-type, and hole mobility of 200 to 350 sq cm/V-sec. Ribbon growth speeds are consistent with the use of EFG silicon for terrestrial power.
Bates, H. E.↗
Thick film silicon growth techniques
The research which was directed toward finding an improved die material is reported. Wetting experiments were conducted with various materials to determine their compatibility with silicon. Work has also continued toward the development of quartz as a die material as new techniques have provided more optimistic results than observed in the past. As a result of the thermal modification previously described, improvements in growth stability have contributed to an increase in ribbon quality.
Bates, H. E.↗