High isolation RF signal selection switches

Abstract

A selection switch with high isolation between RF signal input terminals is achieved with a gated Schmitt trigger circuit feeding into a control NAND gate in each signal switching channel. The control NAND gates of the separate signal channels are coupled to an output terminal by a single NAND gate. The schmitt trigger circuits and all gates are implemented with Schottky transistor-transistor logic circuits having input clamping diodes. Each Schmitt trigger circuit includes two cascaded NAND gates and a feedback isolation Schottky diode between one input terminal connected to receive an RF input and another input terminal connected to receive a feedback signal from the second of the two cascaded NAND gates. Both NAND gates of the Schmitt trigger circuits are enabled by the same switch control signal which enables the control gates.