NASA NTRS · 19740021071
Experimental investigation of a shielded complementary Metal-Oxide Semiconductor (MOS) structure
Abstract
A shielded integrated complimentary MOS transistor structure is described which is used to prevent field inversion in the region not occupied by the gates and which permits the use of a thinner field oxide, reduces the chip area, and has provision for simplified multilayer connections. The structure is used in the design of a static shift register and results in a 20% reduction in area.
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Lin, H. C., Halsor, J. L.. 1974-06-01. Experimental investigation of a shielded complementary Metal-Oxide Semiconductor (MOS) structure. https://ntrs.nasa.gov/citations/19740021071
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