A stable, linear frequency-modulated oscillator, part 1

Abstract

The development of a push-pull frequency-modulated oscillator employing field-effect transistors is described. The advantages of field-effect transistors for use in a frequency-stable oscillator are presented. Linearization of the frequency deviation was accomplished by utilizing the square-law characteristic of an FET used as a modulating amplifier. The push-pull oscillator model produced a linear frequency deviation of more than 10 MHz at a center frequency of approximately 100 MHz. Output power is within 0.6 db of a nominal +8.5 dBm over the desired frequency range, and the modulation bandwidth is dc to 10 MHz. Frequency variation with temperature after compensation with a negative-temperature-coefficient capacitor is within + or - 0.05% from 0 to 60 C.