Effective defect density for MOS breakdown - Dependence on oxide thickness

Abstract

A new procedure for measuring effective defect density takes time-dependent primary dielectric breakdown in MOS devices into account. A time-varying breakdown probability is obtained by applying a constant field stress to a statistically sufficient number of MOS capacitors. Effective defects are assumed distributed randomly in two dimensions, hence indistinguishable. The effective defect density is found to vary with oxide thickness; tentative explanations are ventured to account for this (interfacial tensile stress, ion patching enhanced by local trapping, breakdown in the form of filamentary discharges with release of stored electrostatic energy).