NASA NTRS · 19770000337
New process produces high-power Schottky diodes
Abstract
Processing procedure using low-temperature platinum silicide, results in successful high-yield fabrication of large-area mesa-geometry Schottky diodes, with reverse breakdown voltages as high as 150 volts and leak currents less than 5 milliamps at 212 F.
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Cordes, L. F., Garfinkel, M., Taft, E. A.. 1977-03-01. New process produces high-power Schottky diodes. https://ntrs.nasa.gov/citations/19770000337
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