NASA NTRS · 19780000590
All-ion-implantation process for integrated circuits
Abstract
Simpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.
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Woo, D. S.. 1979-03-01. All-ion-implantation process for integrated circuits. https://ntrs.nasa.gov/citations/19780000590
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