NASA NTRS · 19790024294
Device model for FETSIM circuit simulation program
Abstract
A description of the MOS transistor used in the FETSIM analysis program is presented. CMOS/SOS device parameters are included. Typical device mobilities are given as well as the empirically determined constants necessary to model second-order effect conductance variations due to gate voltage and saturated drain voltage.
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Ramondetta, P.. 1977-03-01. Device model for FETSIM circuit simulation program. https://ntrs.nasa.gov/citations/19790024294
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