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NASA NTRS ยท 19800000431

Automatic chemical vapor deposition

Abstract

Report reviews chemical vapor deposition (CVD) for processing integrated circuits and describes fully automatic machine for CVD. CVD proceeds at relatively low temperature, allows wide choice of film compositions (including graded or abruptly changing compositions), and deposits uniform films of controllable thickness at fairly high growth rate. Report gives overview of hardware, reactants, and temperature ranges used with CVD machine.

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BibTeXRIS

Kennedy, B. W.. 1981-01-01. Automatic chemical vapor deposition. https://ntrs.nasa.gov/citations/19800000431

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