Engineering topics
Publications and source records attributed to Kennedy, B. W..
20-page report reviews methods available for etching specific layers on wafers and discusses automation techniques and features on one particular automated system. Compares two major etching methods, chemical (wet) and plasma (dry), and discusses areas in need of development. Methods covered include "dip-and-dunk" manual method of chemical etching, automated chemical etching, and plasma etching.
Chemical etching for automatic processing of integrated circuits is discussed. The wafer carrier and loading from a receiving air track into automatic furnaces and unloading onto a sending air track are included.
Report reviews chemical vapor deposition (CVD) for processing integrated circuits and describes fully automatic machine for CVD. CVD proceeds at relatively low temperature, allows wide choice of film compositions (including graded or abruptly changing compositions), and deposits uniform films of controllable thickness at fairly high growth rate. Report gives overview of hardware, reactants, and temperature ranges used with CVD machine.
Report discusses totally-automated oxidation and diffusion facility for fabricating IC's. Several innovations are demonstrated: process controller specifically designed for semiconductor processing; automatic loading system to accept wafers from air track, insert them in quartz carrier, and place carrier on paddle for insertion into furnace; automatic unloading of wafers back onto air track; and boron diffusion using diborane.
Report discusses automated ion-implantation facility under development at Marshall Space Flight Center. Facility will produce ultra-reliable IC's with minimal human intervention.
Report discusses subsystems that will constitute fully-automated photolithography facility for IC's. Facility being developed at Marshall Space Flight Center will produce ultrareliable IC's with minimal human intervention.
Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.
A totally automated facility for semiconductor oxidation and diffusion was developed using a state-of-the-art diffusion furnace and high temperature grown oxides. Major innovations include: (1) a process controller specifically for semiconductor processing; (2) an automatic loading system to accept wafers from an air track, insert them into a quartz carrier and then place the carrier on a paddle for insertion into the furnace; (3) automatic unloading of the wafers back onto the air track, and (4) boron diffusion using diborane with plus or minus 5 percent uniformity. Processes demonstrated include Wet and dry oxidation for general use and for gate oxide, boron diffusion, phosphorous diffusion, and sintering.
Results of two experiments involving intercomparisons of rocketsonde measurements of temperature and wind data in the 25 to 80 km altitude region in the CIMO (Commission for Instruments and Methods of Observations) program during September 1973 are reported. Rocketsonde systems used by France, the USSR, the UK, the U.S., and Japan in the two parts of the program (one series of tests at Wallops Island, Va., the other in French Guiana) are described. Wind data were derived from radar tracking of retardation devices and payloads in descent. Day and night temperature differences were examined. The intercomparisons revealed excellent compatibility of the rocketsonde data up to 60 km in wind observations. Some outstanding problems are pointed out.
A beam-lead integrated circuit package assembly including a beam-lead integrated circuit chip, a lead frame array bonded to projecting fingers of the chip, a rubber potting compound disposed around the chip, and an encapsulating molded plastic is described. The lead frame array is prepared by photographically printing a lead pattern on a base metal sheet, selectively etching to remove metal between leads, and plating with gold. Joining of the chip to the lead frame array is carried out by thermocompression bonding of mating goldplated surfaces. A small amount of silicone rubber is then applied to cover the chip and bonded joints, and the package is encapsulated with epoxy resin, applied by molding.
Development of packaging system for mounting beam lead integrated chip circuit on lead frame is discussed. Process for fabricating large scale integration circuits is described. Diagrams illustrating method of construction are included.
Universal electrical connector for use with various types of electric cable, inserts, and pin styles is described. Connector may be used over variety of environmental conditions. Details of construction are discussed. Illustrations of connector are included.
Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.
Shielded flat conductor cable fabricated by electroless and electrolytic plating
Printed circuit board has a thermal coefficient of expansion similar to that of the electronic component leads. High-expansion composite materials are sandwiched between the outer layers of copper and woven fiber glass.
Rectangular electric conductors for conductor cables to withstand spacecraft vibration and controlled atmosphere
Transfer, injection, and compression in pressure molding for electronic components
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