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NASA NTRS · 19810000248

Wideband Amplifier With Subpicosecond Stability

Abstract

RF circuit offers high isolation as well as phase stability. For temperature stability, all circuit components are contained in closed metal housing; packages of active circuit elements are embedded in common heat sink. Provisions not only slow down effect of ambient temperature changes on individual devices but also reduce temperature differences across devices so that differential temperature effects vanish.

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BibTeXRIS

Reinhardt, V. S., Adams, W. A.. 1982-12-01. Wideband Amplifier With Subpicosecond Stability. https://ntrs.nasa.gov/citations/19810000248

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