NASA NTRS · 19810035501
A study of single event upsets in static RAM's
Abstract
Several types of CMOS static random access memories (RAMs) have been tested in a cyclotron for susceptibility to single event upsets and latchup such as might occur in earth orbit or interplanetary space. No upsets have been observed for neutron fluences of 10 to the 11th n/sq cm and higher or proton fluences of 10 to the 9th protons/sq cm.
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Price, W. E., Nichols, D. K., Soliman, K. A.. 1980-12-01. A study of single event upsets in static RAM's. https://ntrs.nasa.gov/citations/19810035501
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